Datasheet > KTA2015

KTA2015

更新时间： 2024-09-23 12:20:39

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	516K
描述
TRANSISTOR (PNP)

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中文翻译

获取价格

数据手册

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KTA2015 数据手册

KTA2015

TRANSISTOR (PNP)

FEATURES

 Excellent h_FELinearity

 Complementary to KTC4076

APPLICATIONS

SOT–323

 General Purpose Switching

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

1. BASE

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

2. EMITTER

3. COLLECTOR

Collector-Base Voltage

-35

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-5

Collector Current

-500

100

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

P_C

R_ΘJA

T_j

1250

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

-35

-30

-5

Typ

Max

Unit

V_(BR)CBOI_C=-100µA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBOI_E=-100µA, I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_EBO

V_CB=-35V, I_E=0

V_EB=-5V, I_C=0

-0.1

240

µA

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=-1V, I_C=-100mA

V_CE=-6V, I_C=-400mA

I_C=-100mA, I_B=-10mA

V_CE=-1V, I_C=-100mA

V_CB=-6V,I_C=-20mA ,

V_CB=-6V, I_E=0, f=1MHz

DC current gain

-0.25

-1

Collector-emitter saturation voltage

Base-emitter voltage

f_T

200

MHz

Transition frequency

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1), h_FE(2)

RANK

O(2)

Y(4)

RANG

h_FE(1)

h_FE(2)

70–140

120–240

25Min

40Min

MARKING

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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