5秒后页面跳转
KTA501E PDF预览

KTA501E

更新时间: 2024-02-14 20:56:45
品牌 Logo 应用领域
KEC 晶体晶体管开关局域网
页数 文件大小 规格书
3页 401K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

KTA501E 技术参数

生命周期:Not Recommended包装说明:SUPER MINIMOLD, USV, 5 PIN
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.74最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:COMMON EMITTER, 2 ELEMENTS
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-G5
元件数量:2端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

KTA501E 数据手册

 浏览型号KTA501E的Datasheet PDF文件第2页浏览型号KTA501E的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTA501E  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
SWITCHING APPLICATION.  
B
B1  
FEATURES  
A super-minimold package houses 2 transistor.  
Excellent temperature response between these 2 transistor.  
1
2
3
5
4
DIM MILLIMETERS  
_
A
A1  
B
1.6+0.05  
High pairing property in hFE  
.
_
1.0+0.05  
_
1.6+0.05  
The follwing characteristics are common for Q1, Q2.  
_
+
1.2 0.05  
B1  
C
0.50  
_
0.2+0.05  
D
H
J
_
+
0.5 0.05  
_
+
0.12 0.05  
P
P
P
5
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
SYMBOL  
RATING  
-50  
UNIT  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
1. Q BASE  
1
2. Q , Q EMITTER  
-50  
V
2
1
3. Q BASE  
2
-5  
V
4. Q COLLECTOR  
2
5. Q COLLECTOR  
1
-150  
-30  
mA  
mA  
mW  
IB  
Base Current  
TESV  
PC *  
Tj  
Collector Power Dissipation  
Junction Temperature  
200  
150  
EQUIVALENT CIRCUIT (TOP VIEW)  
Tstg  
Storage Temperature Range  
* Total Rating  
-55 150  
5
4
Q1  
Q2  
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
SYMBOL  
ICBO  
IEBO  
TEST CONDITION  
MIN.  
TYP. MAX. UNIT.  
VCB=-50V, IE=0  
-
-
-
-
-0.1  
-0.1  
400  
-0.30  
-
VEB=-5V, IC=0  
hFE (Note)  
VCE(sat)  
fT  
VCE=-6V, IC=-2  
120  
-
-
Collector-Emitter Saturation Voltage  
Transition Frequency  
IC=-100 , IB=-10  
VCE=-10V, IC=-1  
-0.1  
-
V
80  
-
Cob  
Collector Output Capacitance  
Noise Figure  
VCB=-10V, IE=0, f=1  
VCE=-6V, IC=-0.1 , f=1 , Rg=10  
4
7
NF  
-
1.0  
10  
Note : hFE Classification Y(4):120 240, GR(6):200 400  
Marking  
Type Name  
5
4
h
FE  
Rank  
S
1
2
3
2003. 2. 25  
Revision No : 2  
1/3  

与KTA501E相关器件

型号 品牌 获取价格 描述 数据表
KTA501U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
KTA501U TYSEMI

获取价格

KTA501U
KTA501U KEXIN

获取价格

PNP Transistors
KTA501U_15 KEXIN

获取价格

PNP Transistors
KTA501U-G KEXIN

获取价格

PNP Transistors
KTA501U-Y KEXIN

获取价格

PNP Transistors
KTA511T KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR
KTA539 KEC

获取价格

TO-92(AT)
KTA701 KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
KTA701E KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)