Datasheet > KTA501U-G

KTA501U-G

更新时间： 2024-12-01 01:03:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1045K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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KTA501U-G 数据手册

SMD Type

Transistors

PNP Transistors

KTA501U

SOT-353

Unit: mm

+0.1

-0.1

1.3

0.65

■ Features

● Excellent temperature response between these 2 transistor.

● High pairing property in h^FE

● The follwing characteristics are common for Q1, Q2.

+0.05

-0.02

+0.1

0.1

0.3

-0.1

+0.1

-0.1

2.1

1. Q BASE

2. Q , Q EMITTER

3. Q BASE

4. Q COLLECTOR

5. Q COLLECTOR

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-50

Unit

VCBO

VCEO

VEBO

-50

-5

Collector Current - Continuous

Base Current

-150

-30

℃

Collector Power Dissipation

Junction Temperature

200

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-50

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA， I = 0

= -100μA， I

E= 0

C= 0

CBO

EBO

CB= -50 V , I

EB= -5V , I

= 0

-0.1

-0.3

-1.2

400

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-100 mA, I

=-10mA

=-100 mA, I

hFE

CE= -6V, I

CE=-6V, I

= -2mA

=-0.1mA, f=1KHz , Rg=10KΩ

= 0,f=1MHz

= -1mA

120

Noise Figure

Collector output capacitance

Transition frequency

CB= -10V, I

^CE= -10V, I

MHz

■ Classification of hfe

Type

Range

Marking

KTA501U-Y

120-240

KTA501U-G

200-400

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