Datasheet > KTA539

KTA539

更新时间： 2024-11-19 17:15:31

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
2页	481K
描述
TO-92(AT)

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中文翻译

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数据手册

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KTA539 数据手册

SEMICONDUCTOR

KTA539

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

LOW FREQUENCY AMPLIFIER

FEATURES

Collector-Base Voltage : V_CBO=-60V.

Complementary to KTC815.

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 +0.50

0.55 MAX

2.30

0.45 MAX

1.00

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-60

UNIT

1. EM ITTER

2. BA SE

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

3. CO LLECTO R

-45

-5

TO-92

Collector Current

-200

625

P_C

Collector Power Dissipation

Junction Temperature

T_j

150

T_stg

Storage Temperature Range

-55 150

DIM MILLIMETERS

4.7 MAX

4.8 MAX

3.7 MAX

0.45 TYP

1.27 TYP

3.0 TYP

0.45 TYP

14 0.5

13.8 + 0.5

2.3 TYP

0.45 MAX

1.0 TYP

2.5 TYP

1. EM ITTER

2. BA SE

3. CO LLECTO R

TO-92 AT TAPING TYPE

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

SYMBOL

V_(BR)CBO

TEST CONDITION

I_C=-100 A, I_E=0

MIN.

TYP. MAX. UNIT

-60

-45

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=-10mA, I_B=0

I_E=-10 A, I_C=0

V_CB=-45V, I_E=0

-0.1

240

-0.9

-0.5

-1.2

I_EBO

V_EB=-3V, I_C=0

Emitter Cut-off Current

h_FE(Note)

V_BE

V_CE=-1V, I_C=-50mA

V_CE=-1V, I_C=-10mA

I_C=-150mA, I_B=-15mA

V_CE=-10V, I_C=-10mA

V_CB=-10V, I_E=0, f=1MHz

DC Current Gain

-0.6

Base-Emitter Voltage

-0.65

-0.25

-0.9

V_CE(sat)

V_BE(sat)

f_T

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

100

MHz

C_ob

Collector Output Capacitance

Note : h_FEClassification

2021. 02. 05

O:70~140, Y:120~240

Revision No : 1

1/2

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