Datasheet > KTA501

KTA501

更新时间： 2024-11-19 22:47:27

品牌	Logo	应用领域
KEC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	401K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

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数据手册

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KTA501 数据手册

SEMICONDUCTOR

KTA501E

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

A super-minimold package houses 2 transistor.

Excellent temperature response between these 2 transistor.

DIM MILLIMETERS

1.6+0.05

High pairing property in h_FE

1.0+0.05

1.6+0.05

The follwing characteristics are common for Q₁, Q₂.

1.2 0.05

0.50

0.2+0.05

0.5 0.05

0.12 0.05

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

RATING

-50

UNIT

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

1. Q BASE

2. Q , Q EMITTER

-50

3. Q BASE

-5

4. Q COLLECTOR

5. Q COLLECTOR

-150

-30

I_B

Base Current

TESV

P_C*

T_j

Collector Power Dissipation

Junction Temperature

200

150

EQUIVALENT CIRCUIT (TOP VIEW)

T_stg

Storage Temperature Range

* Total Rating

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

I_CBO

I_EBO

TEST CONDITION

MIN.

TYP. MAX. UNIT.

V_CB=-50V, I_E=0

-0.1

400

-0.30

V_EB=-5V, I_C=0

h_FE(Note)

V_CE(sat)

f_T

V_CE=-6V, I_C=-2

120

Collector-Emitter Saturation Voltage

Transition Frequency

I_C=-100 , I_B=-10

V_CE=-10V, I_C=-1

-0.1

C_ob

Collector Output Capacitance

Noise Figure

V_CB=-10V, I_E=0, f=1

V_CE=-6V, I_C=-0.1 , f=1 , Rg=10

1.0

Note : h_FEClassification Y(4):120 240, GR(6):200 400

Marking

Type Name

Rank

2003. 2. 25

Revision No : 2

1/3

12 3

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