Datasheet > KTA2015

KTA2015

更新时间： 2024-11-19 14:55:11

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	673K
描述
SOT-323

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中文翻译

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数据手册

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KTA2015 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

KTA2015 TRANSISTOR (PNP)

FEATURES

SOT–323

 Excellent h_FELinearity

 Complementary to KTC4076

APPLICATIONS

 General Purpose Switching

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

1. BASE

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-35

Unit

2. EMITTER

3. COLLECTOR

Collector-Base Voltage

Collector-Emitter Voltage

-30

Emitter-Base Voltage

-5

Collector Current

-500

℃/W

℃

Collector Power Dissipation

100

P_C

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

R_ΘJA

T_J,T_stg

1250

-55～+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=-100µA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBOI_E=-100µA, I_C=0

-35

-30

-5

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_EBO

V_CB=-35V, I_E=0

-0.1

240

µA

V_EB=-5V, I_C=0

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=-1V, I_C=-100mA

V_CE=-6V, I_C=-400mA

I_C=-100mA, I_B=-10mA

V_CE=-1V, I_C=-100mA

V_CB=-6V,I_C=-20mA ,

V_CB=-6V, I_E=0, f=1MHz

DC current gain

-0.25

-1

Collector-emitter saturation voltage

Base-emitter voltage

f_T

200

MHz

Transition frequency

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1), h_FE(2)

RANK

O(2)

Y(4)

RANG

h_FE(1)

h_FE(2)

70–140

120–240

25Min

40Min

MARKING

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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