Datasheet > KTA2014-4

KTA2014-4

更新时间： 2024-12-01 09:22:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	737K
描述
Transistor

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中文翻译

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数据手册

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KTA2014-4 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

SOT-323

KTA2014

TRANSISTOR (PNP)

1. BASE

2. EMITTER

3. COLLECTOR

FEATURES

Low frequency power amplifier application

Power switching application

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-50

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

-5

150

100

150

P_C*

T_J

℃

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=- 0.1mA, I_E=0

I_C= -1mA, I_B=0

I_E=-0.1mA, I_C=0

V_CB=-50V, I_E=0

V_EB= -5V, I_C=0

-50

-5

-0.1

400

-0.3

μA

I_EBO

DC current gain

h_FE

V_CE=-6V,I_C=-2mA

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

I_C=-100mA, I_B= -10mA

V_CE=-10V, I_C=-1mA,

MHz

f_T

V_CB=-10V, I_E=0

f=1MHz

Collector output capacitance

C_ob

V_CE=-6V, I_C=-0.1mA

f=1KHz,Rg=10KΩ

Noise Figure

CLASSIFICATION OF h_FE

Rank

O(2)

Y(4)

120-240

GR(6)

Range

70-140

200-400

MARKING

A,May,2011

中文翻译

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