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KTA2014-O-TP-HF PDF预览

KTA2014-O-TP-HF

更新时间: 2024-11-18 13:09:11
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管开关光电二极管
页数 文件大小 规格书
4页 231K
描述
Small Signal Bipolar Transistor,

KTA2014-O-TP-HF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.62
Is Samacsys:N最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

KTA2014-O-TP-HF 数据手册

 浏览型号KTA2014-O-TP-HF的Datasheet PDF文件第2页浏览型号KTA2014-O-TP-HF的Datasheet PDF文件第3页浏览型号KTA2014-O-TP-HF的Datasheet PDF文件第4页 
KTA2014-O  
KTA2014-Y  
KTA2014-GR  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
PNP  
RoHS Compliant. See ordering information)  
Low frequency power amplifier application  
Power switching application  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
Plastic-Encapsulate  
Transistors  
·
Maximum Ratings @ 25OC Unless Otherwise Specified  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
PC  
TJ  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Collector Dissipation  
Operating Junction Temperature  
Storage Temperature  
O
Rating  
-50  
-50  
-5  
150  
100  
150  
-55 to +150  
Unit  
V
V
SOT-323  
A
D
V
C
mA  
mW  
R
C
B
TSTG  
R
E
B
Electrical Characteristics @ 25 C Unless Otherwise Specified  
F
E
Symbol  
V(BR)CEO  
Parameter  
Collector-Emitter Breakdown Voltage  
(IC=-1mAdc, IB=0)  
Min  
Typ  
Max  
Units  
-50  
---  
---  
Vdc  
V(BR)CBO Collector-Base Breakdown Voltage  
(IC=-0.1mAdc, IE=0)  
V(BR)EBO Collector-Emitter Breakdown Voltage  
(IE=-0.1mAdc, IC=0)  
-50  
-5  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
H
G
J
K
ICBO  
Collector Cutoff Current  
(VCB=-50Vdc,IE=0)  
---  
-0.1  
uA  
uA  
DIMENSIONS  
INCHES  
Cutoff Current  
Emitter  
(VEB=-5Vdc,IC=0)  
MM  
IEBO  
hFE  
0.1  
-
---  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
.026 Nominal  
.047  
.012  
.000  
.035  
.004  
.012  
MAX  
.087  
.053  
.087  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
DC Current Gain  
---  
400  
70  
(VCE=-6Vdc,IC=-2mA)  
0.65Nominal  
1.20  
VCE(sat)  
Collector-Emitter Saturation Voltage  
(IC=-100mAdc, IB=-10mAdc)  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
Vdc  
pF  
---  
---  
---  
---  
- 0.3  
7
F
.30  
.000  
.90  
.100  
.30  
G
H
J
Cob  
Output Capacitance  
(VCB=-10.0Vdc, IE=0, f=1.0MHz)  
K
fT  
Transition frequency  
(VCE=-10Vdc, IC=-1mAdc)  
Suggested Solder  
Pad Layout  
---  
---  
80  
MHz  
0.70  
h
FE CLASSIFICATION  
0.90  
O
Rank  
Marking  
hFE  
Y
GR  
SG  
200~400  
SO  
70~120  
SY  
120~240  
1.90  
mm  
0.65  
0.65  
www.mccsemi.com  
Revision:A  
1 of 4  
2011/01/01  

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