Datasheet > KTA2014-G

KTA2014-G

更新时间： 2024-11-19 01:17:23

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1198K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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KTA2014-G 数据手册

SMD Type

Transistors

PNP Transistors

KTA2014

■ Features

● Excellent hFE Linearity

● Low Noise

● Small Package

● Complementary to KTC4075

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

-50

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

VCBO

VCEO

VEBO

-50

-5

Collector Current - Continuous

Base Current

-150

-30

℃

Collector Power Dissipation

Junction Temperature

100

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-50

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 uA， I

Ic= -1 mA，I =0

= -100 uA， I

CB= -50V , I =0

EB= -5V , I =0

E=0

C=0

CBO

EBO

-0.1

-0.3

-1.2

400

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-100mA, I

=-10mA

=-100mA, I

hFE

CE= -6V, I

= -2mA

= -0.1mA,Rg=10KΩ,f=1KHz

=0, f=1MHz

= -1mA

Noise Figure

Collector output capacitance

Transition frequency

CB= -10V,I

^CE= -10V, I

MHz

■ Classification of hfe

Type

Range

Marking

KTA2014-O

70-140

KTA2014-Y

KTA2014-G

200-400

120-240

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