Datasheet > KTA1270_07

KTA1270_07

更新时间： 2024-11-18 11:32:15

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	447K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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中文翻译

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数据手册

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KTA1270_07 数据手册

SEMICONDUCTOR

KTA1270

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

Excellent h_FELinearity

: h_FE(2)=25(Min.) at V_CE=-6V, I_C=-400mA.

Complementary to KTC3202.

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

0.45

14.00 +0.50

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-35

UNIT

0.55 MAX

2.30

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

+0.10

0.30

- 0.05

1.00

-30

-5

1. EMITTER

2. COLLECTOR

3. BASE

-500

500

I_E

Base Current

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

625

TO-92

T_j

150

T_stg

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

-0.1

240

UNIT

V_CB=-35V, I_E=0

I_EBO

V_EB=-5V, I_C=0

Emitter Cut-off Current

h_FE(1) (Note)

h_FE(2) (Note)

V_CE(sat)

V_BE

V_CE=-1V, I_C=-100mA

V_CE=-6V, I_C=-400mA

I_C=-100mA, I_B=-10mA

V_CE=-1V, I_C=-100mA

V_CE=-6V, I_C=-20mA

V_CB=-6V, I_E=0, f=1MHz

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

-0.1

-0.8

200

-0.25

-1.0

f_T

Transition Frequency

MHz

C_ob

Collector Output Capacitance

Note : h_FE(1) Classification

h_FE(2) Classification

0:70 140, Y:120 240

0:25Min., Y:40Min.

2007. 6. 8

Revision No : 1

1/2

中文翻译

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