Datasheet > KTA1270_15

KTA1270_15

更新时间： 2024-11-21 01:11:43

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描述
PNP Plastic Encapsulated Transistor

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数据手册

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KTA1270_15 数据手册

KTA1270

-0.5A , -35V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92

FEATURE

ꢀ

General Purpose Application Switching Application

CLASSIFICATION OF h_FE

Product-Rank

KTA1270-O

KTA1270-Y

120~240

40(min)

h_{FE (1)}

70~140

25(min)

Range

h_{FE (2)}

1Emitter

2Collector

3Base

Collector

Millimeter

REF.

Base

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

Min.

Max.

0.30

0.51

1.27 TYP.

1.10

2.42

0.36

1.40

2.66

0.76

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Symbol

Ratings

Unit

V_CBO

V_CEO

V_EBO

I_C

-35

Collector to Emitter Voltage

Emitter to Base Voltage

-30

-5

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

-500

°C

P_C

500

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ. Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-35

-30

-5

I_C= -100µA, I_E=0

I_C= -1mA, I_B=0

I_E= -100µA, I_C=0

-0.1

240

µA

V_CB= -35V, I_E=0

Emitter Cut-Off Current

I_EBO

V_EB= -5V, I_C=0

h_{FE (1)}

h_{FE (2)}

V_CE(sat)

V_BE(sat)

f_T

V_CE= -1V, I_C= -100mA

V_CE= -6V, I_C= -400mA

I_C= -100mA, I_B= -10mA

V_CE= -1V, I_C= -100mA

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

-0.25

-1

200

MHz V_CE= -6V, I_C= -20mA, f=100MHz

Collector Output Capacitance

C_ob

V_CB= -6V, I_E=0, f=1MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

18-Dec-2012 Rev. A

Page 1 of 1

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