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KTA1270-Y

更新时间: 2024-02-05 17:47:19
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
1页 68K
描述
PNP Plastic Encapsulated Transistor

KTA1270-Y 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.66Is Samacsys:N
Base Number Matches:1

KTA1270-Y 数据手册

  
KTA1270  
-0.5A , -35V  
PNP Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
TO-92  
FEATURE  
General Purpose Application Switching Application  
CLASSIFICATION OF hFE  
Product-Rank  
KTA1270-O  
KTA1270-Y  
120~240  
40(min)  
hFE (1)  
70~140  
25(min)  
Range  
hFE (2)  
1Emitter  
2Collector  
3Base  
Collector  
2
Millimeter  
Millimeter  
REF.  
REF.  
3
Base  
Min.  
4.40  
4.30  
12.70  
3.30  
0.36  
Max.  
4.70  
4.70  
-
3.81  
0.56  
Min.  
Max.  
A
B
C
D
E
F
G
H
J
0.30  
0.51  
1.27 TYP.  
1.10  
2.42  
0.36  
1.40  
2.66  
0.76  
1
Emitter  
K
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Collector to Base Voltage  
Symbol  
Ratings  
Unit  
VCBO  
VCEO  
VEBO  
IC  
-35  
V
V
Collector to Emitter Voltage  
Emitter to Base Voltage  
-30  
-5  
V
Collector Current - Continuous  
Collector Power Dissipation  
Junction, Storage Temperature  
-500  
mA  
mW  
°C  
PC  
500  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ. Max.  
Unit  
Test Conditions  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut-Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-35  
-30  
-5  
-
-
-
V
V
IC= -100µA, IE=0  
-
-
-
IC= -1mA, IB=0  
-
V
IE= -100µA, IC=0  
-
-0.1  
-0.1  
240  
-
µA  
µA  
VCB= -35V, IE=0  
Emitter Cut-Off Current  
IEBO  
-
-
VEB= -5V, IC=0  
hFE (1)  
hFE (2)  
VCE(sat)  
VBE(sat)  
fT  
70  
25  
-
-
-
VCE= -1V, IC= -100mA  
VCE= -6V, IC= -400mA  
IC= -100mA, IB= -10mA  
VCE= -1V, IC= -100mA  
DC Current Gain  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Transition Frequency  
-
-0.25  
-1  
V
V
-
-
-
200  
13  
-
MHz VCE= -6V, IC= -20mA, f=100MHz  
Collector Output Capacitance  
Cob  
-
-
pF  
VCB= -6V, IE=0, f=1MHz  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
18-Dec-2012 Rev. A  
Page 1 of 1  

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SEMICONDUCTOR TECHNICAL DATA