DIP Type
Transistors
PNP Transistors
KTA1270
Unit:mm
3.8 ± 0.3
TO-92
4.8 ± 0.3
■ Features
● Excellent hFE Linearity
● Complementary to KTC3202.
0.60 Max
0.45 ± 0.1
0.5
2
3
1
1.Emitter
2.Collector
3.Base
1.27
2.54
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
-35
-30
V
-5
Collector Current - Continuous
Emitter Current\
I
C
-500
500
mA
mW
℃
I
E
Collector Power Dissipation
Junction Temperature
P
C
625
T
J
150
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-35
-30
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100uA, I
Ic= -1 mA,I =0
= -100 uA, I =0
CB= -35V , I =0
EB= 5V , I =0
E=0
B
I
E
C
I
CBO
EBO
V
V
E
-0.1
-0.1
-0.25
-1.2
-1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=-100mA, I
B
=-10mA
=-10mA
V
C
=-100mA, I
B
V
BE(on)
V
V
CE= -1V, I
CE= -1V, I
C
= -100mA
= -100mA
hFE(1)
C
70
25
40
240
DC current gain
O
Y
hFE(2)
V
CE= -6V, I
C= -400mA
Collector output capacitance
Transition frequency
C
ob
V
V
CB= -6V, I
CE= -6V, I
E
=0,f=1MHz
13
pF
f
T
C
= -20mA
200
MHz
■ Classification of hfe(1)
Type
KTA1270-O
KTA1270-Y
120-240
Range
70-140
1
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