Datasheet > KST3904S62Z

KST3904S62Z

更新时间： 2024-09-25 18:42:39

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飞兆/仙童 - FAIRCHILD		/
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数据手册

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KST3904S62Z 数据手册

KST3904

General Purpose Transistor

SOT-23

NPN Epitaxial Silicon Transistor

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings T =25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

200

350

150

°C

Collector Power Dissipation

Storage Temperature

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Breakdown Voltage

* Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Max.

Units

I =10µA, I =0

CBO

CEO

EBO

I 1mA, I =0

C B

I =10µA, I =0

=30V, V =3V

CEX

* DC Current Gain

=1V, I =0.1mA

100

=1V, I =1mA

=1V, I =10mA

300

=1V, I =50mA

=1V, I =100mA

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

I =10mA, I =1mA

0.2

0.3

I =50mA, I =5mA

(sat)

I =10mA, I =1mA

0.65

300

0.85

0.95

I =50mA, I =5mA

Output Capacitance

Current Gain-Bandwidth Product

Noise Figure

=5V, I =0, f=1MHz

MHz

=20V, I =10mA, f=100MHz

I =100µA, V =5V, R =1KΩ

f=10Hz to 15.7KHz

Turn On Time

Turn Off Time

=3V, V =0.5V

I =10mA, I =1mA

=3V, I =10mA,

250

=I =1mA

B1 B2

OFF

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Marking

Rev. A, October 2001

12 3 4

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