Datasheet > KST3906_10

KST3906_10

更新时间： 2024-09-25 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	113K
描述
PNP Epitaxial Silicon Transistor

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中文翻译

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数据手册

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KST3906_10 数据手册

September 2010

KST3906

PNP Epitaxial Silicon Transistor

Features

• General Purpose Transistor

Marking

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-40

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-40

-5

-200

350

150

°C

P_C

Collector Power Dissipation

Storage Temperature

T_STG

Electrical Characteristics T_a=25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CEX

Parameter

Collector-Base Breakdown Voltage

Test Condition

I_C= -10μA, I_E=0

Min.

-40

-5

Max.

Unit

* Collector-Emitter Breakdown Voltage I_C= -1.0mA, I_B=0

Emitter-Base Breakdown Voltage

Collector Cut-off Current

* DC Current Gain

I_E= -10μA, I_C=0

V_CE= -30V, V_EB= -3V

-50

h_FE

V_CE= -1V, I_C= -0.1mA

V_CE= -1V, I_C= -1mA

V_CE= -1V, I_C= -10mA

V_CE= -1V, I_C= -50mA

V_CE= -1V, I_C= -100mA

100

300

V_CE(sat) * Collector-Emitter Saturation Voltage I_C= -10mA, I_B= -1.0mA

I_C= -50mA, I_B= -5.0mA

-0.25

-0.4

V_BE(sat) * Base-Emitter Saturation Voltage

I_C= -10mA, I_B= -1.0mA

I_C= -50mA, I_B= -5.0mA

-0.65

250

-0.85

-0.95

f_T

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

I_C= -10mA, V_CE= -20V, f=100MHz

V_CB= -5V, I_E=0, f=1.0MHz

MHz

C_ob

4.5

I_C= -100μA, V_CE= -5V

R_S=1KΩ, f=10Hz to 15.7KHz

t_ON

Turn On Time

Turn Off Time

V_CC= -3V, V_BE= -0.5V

I_C= -10mA, I_B1= -1mA

t_OFF

V_CC= -3V, I_C= -10mA

I_B1=I_B2= -1mA

300

* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

KST3906 Rev. A3

www.fairchildsemi.com

12 3 4

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