是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | DPAK |
包装说明: | DPAK-3/2 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.1 |
Is Samacsys: | N | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 100 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-252AA |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 20 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJD122TF | FAIRCHILD |
类似代替 |
暂无描述 | |
KSH122TF | FAIRCHILD |
类似代替 |
NPN Silicon Darlington Transistor | |
MJD122T4G | ONSEMI |
功能相似 |
Complementary Darlington Power Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSH127 | FAIRCHILD |
获取价格 |
D-PAK for Surface Mount Applications | |
KSH127 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
KSH127I | FAIRCHILD |
获取价格 |
8 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251, IPAK-3 | |
KSH127-I | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
KSH127ITU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plastic | |
KSH127TF | FAIRCHILD |
获取价格 |
暂无描述 | |
KSH127TF | ROCHESTER |
获取价格 |
8A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 | |
KSH127TF | ONSEMI |
获取价格 |
PNP硅达林顿晶体管 | |
KSH127TM | ROCHESTER |
获取价格 |
8A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 | |
KSH127TM | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic |