Datasheet > KSH13003

KSH13003

更新时间： 2024-11-02 05:41:03

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管开关
页数	文件大小	规格书
2页	254K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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KSH13003 数据手册

NPN S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

KSH13003

█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS

High Speed Switching. Suitable for Switching Regulator and Montor Control

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -65~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 40W

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 700V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 400V

V_EBO— — Emitter- Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 9V

I— — _CCollector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1.5A

IB— — Base Curren⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 0.75A

1―Base，B

2―Collector，C

3― Emitter，E

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Collector-Emitter Breakdown Voltage

Emitter-Base Cut-off Current

DC Current Gain

Min

Typ

Max Unit

Test Conditions

I_C=5mA, IB=0

BVCEO

IEBO

400

10 μA

V_EB=9V, I_C=0

HFE1

HFE2

V_CE=5V, I_C=0.5A

V_CE=2V, I_C=1A

I_C=0.5A, I_B=0.1A

I_C=1A, I_B=0.25A

I_C=1.5A, I_B=0.5A

I_C=0.5A, IB=0.1A

DC Current Gain

VCE(sat)1 Collector- Emitter Saturation Voltage

Collector- Emitter Saturation Voltage

0.5 V

VCE(sat)2

VCE(sat)3 Collector- Emitter Saturation Voltage

VBE(sat)1 Base-Emitter Saturation Voltage

VBE(sat)2 Base-Emitter Saturation Voltage

I_C=1A, IB=0.25A

V_CE=10V,I_C=0.1A

V_CC=125V, I_C=1A,

1.2 V

MHz

μs

Current Gain-Bandwidth Product

Turn On Time

tON

1.1

tSTG

Storage Time

Fall Time

I_B1=0.2A,I_B2=-0.2A

4.0 μs

0.7 μs

RL=125Ω

█ hFE Classification

19-26

10-16

14-21

24-31

29-40

中文翻译

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