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KSH127I PDF预览

KSH127I

更新时间: 2024-11-02 12:59:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管
页数 文件大小 规格书
6页 58K
描述
8 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251, IPAK-3

KSH127I 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-251包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
风险等级:5.77最大集电极电流 (IC):8 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):100JEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

KSH127I 数据手册

 浏览型号KSH127I的Datasheet PDF文件第2页浏览型号KSH127I的Datasheet PDF文件第3页浏览型号KSH127I的Datasheet PDF文件第4页浏览型号KSH127I的Datasheet PDF文件第5页浏览型号KSH127I的Datasheet PDF文件第6页 
KSH127  
D-PAK for Surface Mount Applications  
High DC Current Gain  
Built-in a Damper Diode at E-C  
Lead Formed for Surface Mount Applications (No Suffix)  
Straight Lead (I-PAK, “ - I “ Suffix)  
Electrically Similar to Popular TIP127  
Complement to KSH122  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
PNP Silicon Darlington Transistor  
Equivalent Circuit  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
C
Symbol  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
Value  
- 100  
- 100  
- 5  
Units  
V
V
V
V
V
CBO  
CEO  
EBO  
B
V
I
I
I
- 8  
A
C
- 16  
A
CP  
B
- 120  
20  
mA  
W
W
°C  
°C  
R1  
R2  
P
Collector Dissipation (T =25°C)  
C
C
E
R1 8 k  
R2 0.12 k Ω  
Collector Dissipation (T =25°C)  
1.75  
a
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
*Collector-Emitter Sustaining Voltage  
Collector Cut-off Current  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
I
= - 30mA, I = 0  
- 100  
V
CEO  
CEO  
CBO  
EBO  
C
B
I
I
I
V
V
V
= - 50V, I = 0  
- 10  
- 10  
- 2  
µA  
µA  
mA  
CE  
CB  
EB  
B
= - 100V, I = 0  
E
= - 5V, I = 0  
C
h
*DC Current Gain  
V
V
= - 4V, I = - 4A  
1000  
100  
12K  
FE  
CE  
CE  
C
= - 4V, V = -8A  
EB  
V
(sat)  
*Collector-Emitter Saturation Voltage  
I
I
= - 4A, I = - 16mA  
- 2  
- 4  
V
V
CE  
C
C
B
= - 8A, I = - 80mA  
B
V
V
C
(sat)  
(on)  
*Base-Emitter Saturation Voltage  
*Base-Emitter On Voltage  
Output Capacitance  
I
= - 8A, I = - 80mA  
- 4.5  
- 2.8  
300  
V
V
BE  
BE  
ob  
C
B
V
V
= -4V, I = - 4A  
C
CE  
= - 10V, I = 0  
pF  
CB  
E
f= 0.1MHz  
* Pulse Test: PW300µs, Duty Cycle2%  
©2002 Fairchild Semiconductor Corporation  
Rev. A4, October 2002  

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