Datasheet > KSH13007

KSH13007

更新时间： 2024-11-14 05:41:03

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	248K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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KSH13007 数据手册

N PN S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

KSH13007

█ HIGH VOLTAGE SWITCH MODE APPLICATION

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-220

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation（T_c=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 80W

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 700V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 400V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 9V

I_C— — Collector Current（DC）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 8A

I_C— — Collector Current（Pulse）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 16A

I_B— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 4A

1―Base，B

2―Collector，C

3―Emitter, E

█ 参数（T_a=25℃）

Symbol

Characteristics

Collector-Emitter Sustaining Voltage

Emitter-Base Cutoff Current

DC Current Gain

Min

Typ

Max

Unit

Test Conditions

I_C=10mA, I_B=0

V_EB=9V, I_C=0

BVCEO

IEBO

400

HFE（1）

HFE（2）

VCE(sat1)

VCE(sat2)

VCE(sat3)

VBE(sat1)

VBE(sat2)

Cob

V_CE=5V, I_C=2A

V_CE=5V, I_C=5A

I_C=2A, I_B=400mA

I_C=5A, I_B=1A

Collector- Emitter Saturation Voltage

Base- Emitter Saturation Voltage

I_C=8A, I_B=2A

I_C=2A, I_B=0.4A

I_C=5A, I_B=1A

1.2

1.6

Output Capacitance

Current Gain-Bandwidth Product

Turn On time

V_CB=10V, f=0.1MHz z

V_CE=10V, I_C=500mA

110

f_T

tON

tSTG

1.6 uS

0.7 uS

Vcc=125V,Ic=5A

IB1=IB2=1A

Storage Time

Fall Time

█ hFE Classification

24— 31

29— 40

10— 16

14— 21

19— 26

中文翻译

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