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KSH127TF PDF预览

KSH127TF

更新时间: 2024-11-03 11:13:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管达林顿晶体管
页数 文件大小 规格书
8页 174K
描述
PNP硅达林顿晶体管

KSH127TF 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:5.14
最大集电极电流 (IC):8 A集电极-发射极最大电压:100 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):100
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):20 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

KSH127TF 数据手册

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KSH127TF 替代型号

型号 品牌 替代类型 描述 数据表
MJD127T4G ONSEMI

类似代替

Complementary Darlington Power Transistor
MJD127G ONSEMI

类似代替

Complementary Darlington Power Transistor
MJD127 ONSEMI

类似代替

Complementary Darlington Power Transistors

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