是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.8 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 25 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 140 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.5 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 150 MHz | 最大关闭时间(toff): | 375 ns |
最大开启时间(吨): | 60 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSB1121-S | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 | |
KSB1121STF | FAIRCHILD |
获取价格 |
PNP Epitaxial Planar Silicon Transistor, 3LD,SOT89,JEDEC TO-243,OPTION AA, 4000/TAPE REEL | |
KSB1121STF_NL | FAIRCHILD |
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Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE | |
KSB1121STM | FAIRCHILD |
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Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, | |
KSB1121T | FAIRCHILD |
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Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon | |
KSB1121TTF | FAIRCHILD |
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暂无描述 | |
KSB1121U | FAIRCHILD |
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Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon | |
KSB1121-U | SAMSUNG |
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Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 | |
KSB1149 | FAIRCHILD |
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Low Collector Saturation Voltage Built-in Damper Diode at E-C | |
KSB1149 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic |