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KSB1121S PDF预览

KSB1121S

更新时间: 2024-10-29 20:48:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
5页 430K
描述
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon

KSB1121S 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-F3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.8外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):140
JESD-30 代码:R-PSSO-F3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHz最大关闭时间(toff):375 ns
最大开启时间(吨):60 nsBase Number Matches:1

KSB1121S 数据手册

 浏览型号KSB1121S的Datasheet PDF文件第2页浏览型号KSB1121S的Datasheet PDF文件第3页浏览型号KSB1121S的Datasheet PDF文件第4页浏览型号KSB1121S的Datasheet PDF文件第5页 
July 2005  
KSB1121  
PNP Epitaxial Planar Silicon Transistor  
High Current Driver Applications  
Low Collector-Emitter Saturation Voltage  
Large Current Capacity  
Fast Switching Speed  
Complement to KSD1621  
Marking  
1 1  
P Y  
2 1  
W W  
SOT-89  
1
Weekly code  
Year code  
hFE grage  
1. Base 2. Collector 3. Emitter  
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-30  
-25  
-6  
V
V
V
A
VCEO  
VEBO  
IC  
-2  
PC  
PC*  
Collector Power Dissipation  
500  
1.3  
mW  
W
TJ  
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
TSTG  
-55 ~ 150  
* Mounted on Ceramic Board (250mm2 x 0.8mm)  
Electrical Characteristics Ta = 25°C unless otherwise noted  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
IC = -10µA, IE = 0  
-30  
-25  
-6  
V
IC = -1mA, IB = 0  
IE = -10µA, IC = 0  
VCB = -20V, IE = 0  
VBE = -4V, IC = 0  
VCE = -2V, IC = -0.1A  
V
V
-100  
-100  
560  
nA  
nA  
IEBO  
Emitter Cut-off Current  
hFE1  
hFE2  
DC Current Gain  
100  
65  
V
CE = -2V, IC = -1.5A  
VCE (sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
IC = -1.5A, IB = -75mA  
IC = -1.5A, IB = -75mA  
-0.35  
-0.85  
-0.6  
-1.2  
V
V
V
BE (sat)  
©2005 Fairchild Semiconductor Corporation  
KSB1121 Rev. B1  
1
www.fairchildsemi.com  

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