Datasheet > KI5515DC

KI5515DC

更新时间： 2024-11-18 05:40:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	70K
描述
Complementary 20-V (D-S) MOSFET

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中文翻译

获取价格

数据手册

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KI5515DC 数据手册

SMD Type

ICIC

Complementary 20-V (D-S) MOSFET

KI5515DC

Features

TrenchFET Power MOSFETS

Ultra Low rDS(on) and Excellent Power

Handling In Compact Footprint

Absolute Maximum Ratings TA = 25

N-Channel

5 secs Steady State

P-Channel

5 secs Steady State

Parameter

Symbol

Unit

-20

Drain-Source Voltage

V^DS

V^GS

Gate-Source Voltage

5.9

4.2

4.4

3.1

-4.1

-2.9

-3

Continuous Drain Current (T^J= 150 )* TA = 25

T^A= 85

I^D

-2.2

-15

Pulsed Drain Current

I^DM

I^S

Continuous Source Current (Diode Conduction)*

1.8

2.1

1.1

0.9

1.1

0.6

-1.8

2.1

1.1

-0.9

1.1

0.6

Maximum Power Dissipation*

T^A= 25

T^A= 85

-55 to 150

Operating Junction and Storage Temperature Range T^J, Tstg

*Surface Mounted on 1" X 1" FR4 Board.

Thermal Resistance Ratings

Parameter

Maximum Junction-to-Ambient*

Maximum Junction-to-Case (Drain)

Symbol

R^thJA

Typ

Max

Unit

5 sec

Steady State

110

R^thJF

*Surface Mounted on 1" X 1" FR4 Board.

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中文翻译

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