Datasheet > KI8205T

KI8205T

更新时间： 2024-11-18 05:40:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	47K
描述
Dual N-Channel High Density Trench MOSFET

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中文翻译

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数据手册

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KI8205T 数据手册

SMD Type

MOSFET

Dual N-Channel High Density Trench MOSFET

KI8205T

Unit: mm

Features

Super high dense cell trench design for low RDS(on).

Rugged and reliable.

Surface Mount package.

1 pin mark

D1/D2

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

VDS

VGS

Rating

Unit

Gate-Source Voltage

4.3

Drain Current-Continuous @ TA = 25

-Pulse *2

Drain-Source Diode Forward Current *1

IDM

21.5

1.7

1.25

0.75

Maximum Power Dissipation TA=25 *1

TA=75

Operating Junction and Storage Temperature Range

Thermal Resistance,Junction-to-Ambient

TJ,TSTG

RthJA

- 55 to 150

100

*1 Surface Mounted on FR4 Board , t

10sec .

*2 Pulse width limited by maximum junction temperature.

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