Datasheet > KIA10N60H

KIA10N60H

更新时间： 2024-06-27 12:12:02

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KIA10N60H 数据手册

9.5A，600V

10N60H

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

1.Description

The KIA10N60H N-Channel enhancement mode silicon gate power MOSFET is designed

for high voltage, high speed power switching applications such as high efficiency switched mode power

supplies, active power factor correction,electronic lamp ballasts based on half bridge to pology.

2. Features

R_DS(on)=0.6Ω @ V_GS=10V

Low gate charge ( typical 44nC)

Fast switching capability

avalanche energy specified

Improved dv/dt capability

3. Pin configuration

Function

Gate

Drain

Source

1 of 5

Rev 1.1 JAN 2014

12 3 4 5

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