Datasheet > KI5908DC

KI5908DC

更新时间： 2024-11-18 12:31:35

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	368K
描述
TrenchFET Power MOSFETS Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint

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中文翻译

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数据手册

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KI5908DC 数据手册

SS MM DD TTyy pp ee

TrMaMnOOsSiSsFtFI

IEoCCICTs

IErC

Product specification

KI5908DC

Features

TrenchFET Power MOSFETS

Ultra Low r^DS(on)and Excellent Power

Handling In Compact Footprint

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

5secs

Steady State

Unit

Gate-Source Voltage

VGS

5.9

4.2

4.4

3.1

Continuous Drain Current (T^J= 150 ) T^A= 25

T^A= 85

I^D

Pulsed Drain Current

I^DM

I^S

Continuous Source Current (Diode Conduction)*

1.8

2.1

1.1

0.9

1.1

0.6

Maximum Power Dissipation *

T^A= 25

T^A= 85

P^D

-55 to 150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations

T^J, T^stg

*Surface Mounted on 1" X 1" FR4 Board.

Thermal Resistance Ratings

Parameter

Symbol

RthJA

Typical

Maximum

Unit

5 sec

Maximum Junction-to-Ambient *

Steady-State

110

Maximum Junction-to-Foot (Drain)

R^thJF

* Surface Mounted on 1" X 1" FR4 Board.

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4008-318-123

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