Datasheet > KI6968BEDQ

KI6968BEDQ

更新时间： 2024-10-30 12:31:35

品牌	Logo	应用领域
TYSEMI		栅
页数	文件大小	规格书
2页	203K
描述
Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -20V

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KI6968BEDQ 数据手册

SSMMDD TTyyppee

MOSFIECICT

Product specification

KI6968BEDQ(SI6968BEDQ)

TSSOP-8

Unit: mm

Features

V^DS=20V,r^DS(on)=0.022 @V^GS=4.5V,I^D=6.5A

V^DS=20V,r^DS(on)=0.030 @V^GS=2.5V,I^D=5.5A

N-Channel

* Typical value by design

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

10 secs

Steady State

Unit

Gate-Source Voltage

VGS

6.5

5.5

5.2

3.5

T^A= 25

Continuous Drain Current*

I^D

T^A= 70

Pulsed Drain Current

I^DM

I^S

Continuous Source Current *

1.5

1.0

Maximum Power Dissipation

T^A= 25

T^A= 70

P^D

0.96

0.64

Operating Junction and Storage Temperature Range

Parameter

-55 to 150

T^J, T^stg

Symbol

Typ

Max

Unit

Maximum Junction-to-Ambient*

10 sec

R^thJA

R^thJF

Steady-State

100

120

Maximum Junction-to-Foot (Drain)

* Surface Mounted on FR4 Board, t 10 sec.

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sales@twtysemi.com

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4008-318-123

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