Datasheet > KI7N10DY

KI7N10DY

更新时间： 2024-11-19 18:09:19

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	341K
描述
N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KI7N10DY 数据手册

SMD Type

MOSFET

N-Channel MOSFET

KI7N10DY

SOP-8

■ Features

● VDS (V) = 100V

● I

D = 7A (VGS = 10V)

0.15

1.50

● R^DS(ON)＜ 350mΩ (VGS = 10V)

5 Drain

6 Drain

7 Drain

8 Drain

1 Source

2 Source

3 Source

4 Gate

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

VDS

100

Gate-Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

Thermal Resistance.Junction- to-Ambient

Junction Temperature

RthJA

℃/W

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

100

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

=250μA, VGS=0V

DS=80V, VGS=0V

DS=80V, VGS=0V, T

DS=0V, VGS=±20V

Zero Gate Voltage Drain Current

DSS

GSS

μA

C=85℃

Gate-Body Leakage Current

Gate Threshold Voltage

±100

GS(th)

DS=VGS , I

=250μA

Static Drain-Source On-Resistance

Maximum Body-Diode Continuous Current

Diode Forward Voltage

RDS(O

GS=10V, I

=3.5A

350

mΩ

=7A,VGS=0V

0.8

1.3

Pulse test ; pulse width≤300μs, duty cycle≤2% (TA=25°C Unless Otherwise Noted)

■ Marking

Marking

7N10

www.kexin.com.cn

中文翻译

下载PDF

与KI7N10DY相关器件

型号	品牌	获取价格	描述	数据表
KI8205A	KEXIN	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
KI8205A	TYSEMI	获取价格	Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V
KI8205T	TYSEMI	获取价格	Super high dense cell trench design for low RDS(on) Rugged and reliable.
KI8205T	KEXIN	获取价格	Dual N-Channel High Density Trench MOSFET
KI8810DS	KEXIN	获取价格	N-Channel MOSFET
KI8810DY	KEXIN	获取价格	Dual N-Channel MOSFET
KI8810T	KEXIN	获取价格	Dual N-Channel MOSFET
KI9410DY	KEXIN	获取价格	N-Channel 30-V (D-S) MOSFET
KI9435DY	KEXIN	获取价格	P-Channel MOSFET
KI9926A	TYSEMI	获取价格	Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V