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KI5935DC PDF预览

KI5935DC

更新时间: 2024-11-20 12:04:15
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
2页 275K
描述
TrenchFET Power MOSFETS Low rDS(on) Dual and Excellent Power Handling In A Compact Footprint

KI5935DC 数据手册

 浏览型号KI5935DC的Datasheet PDF文件第2页 
TransistIIoCIrCs  
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Product specification  
KI5935DC  
Features  
TrenchFET Power MOSFETS  
Low rDS(on) Dual and Excellent Power  
Handling In A Compact Footprint  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
5 secs  
Steady State  
Unit  
V
-20  
8
Gate-Source Voltage  
VGS  
-4.1  
-2.9  
-3.0  
-2.2  
TA = 25  
ID  
Continuous Drain Current (TJ = 150 ) *  
TA = 85  
A
Pulsed Drain Current  
-15  
IDM  
IS  
Continuous Source Current *  
-1.8  
2.1  
1.1  
-0.9  
1.1  
0.6  
TA = 25  
TA = 85  
Maximum Power Dissipation *  
PD  
W
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
Parameter  
-55 to 150  
260  
TJ, Tstg  
Symbol  
RthJA  
Typ  
50  
Max  
60  
Unit  
/W  
t
5 sec  
Maximum Junction-to-Ambienta  
Steady-State  
Steady-State  
90  
110  
40  
Maximum Junction-to-Foot (Drain)  
RthJF  
30  
* Surface Mounted on 1" X 1' FR4 Board.  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
4008-318-123  

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