Datasheet > KI5935DC

KI5935DC

更新时间： 2024-11-20 05:40:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	66K
描述
Dual P-Channel 1.8-V (G-S) MOSFET

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中文翻译

获取价格

数据手册

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KI5935DC 数据手册

SMD Type

ICIC

Dual P-Channel 1.8-V (G-S) MOSFET

KI5935DC

Features

TrenchFET Power MOSFETS

Low rDS(on) Dual and Excellent Power

Handling In A Compact Footprint

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

5 secs

Steady State

-20

Unit

Gate-Source Voltage

VGS

-4.1

-2.9

-3.0

-2.2

TA = 25

Continuous Drain Current (T^J= 150 ) *

T^A= 85

Pulsed Drain Current

-15

I^DM

Continuous Source Current *

-1.8

2.1

1.1

-0.9

1.1

0.6

T^A= 25

T^A= 85

Maximum Power Dissipation *

P^D

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Parameter

-55 to 150

260

T^J, Tstg

Symbol

R^thJA

Typ

Max

Unit

5 sec

Maximum Junction-to-Ambienta

Steady-State

110

Maximum Junction-to-Foot (Drain)

R^thJF

* Surface Mounted on 1" X 1' FR4 Board.

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