Datasheet > KI7540DP

KI7540DP

更新时间： 2024-10-30 12:04:15

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	335K
描述
TrenchFET Power MOSFET PWM Optimized for High Efficiency

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中文翻译

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KI7540DP 数据手册

SMD Type

TransistIoCICrs

Product specification

KI7540DP

Features

TrenchFET Power MOSFET

PWM Optimized for High Efficiency

Absolute Maximum Ratings TA = 25

N-Channel

10 secs Steady State

P-Channel

Unit

Parameter

Symbol

10 secs

Steady State

-12

Drain-Source Voltage

V^DS

V^GS

Gate-Source Voltage

11.8

9.5

7.6

6.1

-8.9

-7.1

-5.7

-4.6

Continuous Drain Current (T^J= 150 )* T^A= 25

T^A= 70

I^D

Pulsed Drain Current

I^DM

I^S

Continuous Source Current (Diode Conduction)*

2.9

3.5

2.2

1.1

1.4

0.9

-2.9

3.5

2.2

-1.1

1.4

0.9

Maximum Power Dissipation*

T^A= 25

T^A= 70

-55 to 150

Operating Junction and Storage Temperature Range

*Surface Mounted on 1" X 1" FR4 Board.

T^J, T^stg

Thermal Resistance Ratings

N-Channel

Typ Max

P-Channel

Parameter

Symbol

Unit

Typ

Max

10 sec

Maximum Junction-to-Ambient*

R^thJA

R^thJC

Steady State

Maximum Junction-to-Case (Drain)

3.9

5.5

3.9

5.5

*Surface Mounted on 1" X 1" FR4 Board.

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