Datasheet > K9F2808U0B-V

K9F2808U0B-V

更新时间： 2024-11-20 22:18:31

品牌	Logo	应用领域
三星 - SAMSUNG		闪存
页数	文件大小	规格书
29页	305K
描述
16M x 8 Bit NAND Flash Memory

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中文翻译

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数据手册

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K9F2808U0B-V 数据手册

K9F2808U0B-YCB0,YIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0

FLASH MEMORY

Document Title

16M x 8 Bit NAND Flash Memory

Revision History

Revision No. History

Draft Date

Remark

0.0

0.1

0.2

Initial issue.

May 28’ th 2001

Advance

K9F2808U0B(3.3V device)’ s qualification is finished

Jun. 30th 2001

Jul. 30th 2001

K9F2808Q0B (1.8V device)

- Changed typical read operation current (Icc1) from 8mA to 5mA

- Changed typical program operation current (Icc2) from 8mA to 5mA

- Changed typical erase operation current (Icc3) from 8mA to 5mA

- Changed typical program time(tPROG) from 200us to 300us

- Changed ALE to RE Delay (ID read, tAR1) from 100ns to 20ns

- Changed CLE hold time(tCLH) from 10ns to 15ns

- Changed CE hold time(tCH) from 10ns to 15ns

K9F2808Q0B

: Preliminary

- Changed ALE hold time(tALH) from 10ns to 15ns

- Changed Data hold time(tDH) from 10ns to 15ns

- Changed CE Access time(tCEA) from 45ns to 60ns

- Changed Read cycle time(tRC) from 50ns to 70ns

- Changed Write Cycle time(tWC) from 50ns to 70ns

- Changed RE Access time(tREA) from 35ns to 40ns

- Changed RE High Hold time(tREH) from 15ns to 20ns

- Changed WE High Hold time(tWH) from 15ns to 20ns

0.3

1. Device Code is changed

- TBGA package information : ’ B’ --> ’ D’

Aug. 23th 2001

ex) K9F2808Q0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0

K9F2808U0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0

2. VIH ,VIL of K9F2808Q0B(1.8 device) is changed

(before revision)

I/O pins

VccQ-0.4

VCC-0.4

VccQ

VCC

Input High Voltage

VIH

VIL

Except I/O pins

Input Low Voltage,

All inputs

0.4

(after revision)

VccQ-0.4

VccQ

+0.3

I/O pins

Input High Voltage

VIH

VIL

VCC

+0.3

Except I/O pins

VCC-0.4

-0.3

Input Low Voltage,

All inputs

0.4

Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site.

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

12 3 4 5 6 7...29

中文翻译

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与K9F2808U0B-V相关器件

型号	品牌	获取价格	描述	数据表
K9F2808U0B-VCB0	SAMSUNG	获取价格	16M x 8 Bit NAND Flash Memory
K9F2808U0B-VIB0	SAMSUNG	获取价格	16M x 8 Bit NAND Flash Memory
K9F2808U0B-VIB00	SAMSUNG	获取价格	Flash, 16MX8, 35ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, PLASTIC, WSOP1-48
K9F2808U0B-Y	SAMSUNG	获取价格	16M x 8 Bit NAND Flash Memory
K9F2808U0B-YCB0	SAMSUNG	获取价格	16M x 8 Bit NAND Flash Memory
K9F2808U0B-YCB00	SAMSUNG	获取价格	Flash, 16MX8, 35ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9F2808U0B-YIB0	SAMSUNG	获取价格	16M x 8 Bit NAND Flash Memory
K9F2808U0B-YIB00	SAMSUNG	获取价格	Flash, 16MX8, 35ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9F2808U0C	SAMSUNG	获取价格	16M x 8 Bit NAND Flash Memory
K9F2808U0C-BIB0	SAMSUNG	获取价格	Flash, 16MX8, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48

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