Datasheet > K9F2808U0C

K9F2808U0C

更新时间： 2024-11-20 22:47:43

品牌	Logo	应用领域
三星 - SAMSUNG		闪存
页数	文件大小	规格书
31页	775K
描述
16M x 8 Bit NAND Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K9F2808U0C 数据手册

FLASH MEMORY

K9F2808U0C

Document Title

16M x 8 Bit NAND Flash Memory

Revision History

Revision No. History

Draft Date

Remark

0.0

Initial issue.

Apr. 15th 2002

Advance

1.0

TBGA PKG Dimension Change

Sep. 5th 2002

Advance

48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm

2.0

1.A3 Pin assignment of TBGA Package is changed.(Page 4)

(before) NC --> (after) Vss

Dec.10th 2002

Preliminary

2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32)

3. Add the data protection Vcc guidence for 1.8V device - below about

1.1V. (Page 33)

2.1

Mar. 6th 2003

Mar. 13rd 2003

The min. Vcc value 1.8V devices is changed.

K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V

Pb-free Package is added.

K9F2808U0C-FCB0,FIB0

K9F2808Q0C-HCB0,HIB0

K9F2816U0C-HCB0,HIB0

K9F2816U0C-PCB0,PIB0

K9F2816Q0C-HCB0,HIB0

K9F2808U0C-HCB0,HIB0

K9F2808U0C-PCB0,PIB0

2.2

Some AC parameters are changed(K9F28XXQ0C).

tWC tWH tWP tRC tREH tRP tREA tCEA

2.3

2.4

Before 45 15 25 50 15 25 30

After 60 20 40 60 20 40 40

Mar. 26th 2003

May. 24th 2003

1. New definition of the number of invalid blocks is added.

(Minimum 502 valid blocks are guaranteed for each contiguous 64Mb

memory space)

2. Note is added.

(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

durations of 20 ns or less.)

2.5

2.6

1. K9F2808U(Q)0C-DC(I)B0,K9F2816U(Q)0C-DC(I)B0 is deleted.

2. tWC is changed.

45ns(Before) ---> 50ns(After)

3. Minimum valid block number is changed.

1004(Before) --> 1009(After)

1. Minimum valid block number is changed.

1009(Before) --> 1004(After)

Oct. 10th 2003

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

12 3 4 5 6 7...31

中文翻译

下载PDF

与K9F2808U0C相关器件

型号	品牌	获取价格	描述	数据表
K9F2808U0C-BIB0	SAMSUNG	获取价格	Flash, 16MX8, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48
K9F2808U0C-DCB0	SAMSUNG	获取价格	16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0C-DCB00	SAMSUNG	获取价格	Flash, 16MX8, 30ns, PBGA63, 9 X 11 MM, 0.80 MM PITCH, TBGA-63
K9F2808U0C-DIB0	SAMSUNG	获取价格	16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0C-DIB00	SAMSUNG	获取价格	Flash, 16MX8, 30ns, PBGA63, 9 X 11 MM, 0.80 MM PITCH, TBGA-63
K9F2808U0C-F	SAMSUNG	获取价格	16M x 8 Bit NAND Flash Memory
K9F2808U0C-FCB0	SAMSUNG	获取价格	16M x 8 Bit NAND Flash Memory
K9F2808U0C-FCB00	SAMSUNG	获取价格	Flash, 16MX8, 30ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48
K9F2808U0C-FCB0T	SAMSUNG	获取价格	Flash, 16MX8, 30ns, PDSO48
K9F2808U0C-FIB0	SAMSUNG	获取价格	16M x 8 Bit NAND Flash Memory

与K9F2808U0C相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

28
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

21
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

50
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

48

产品中心

服务支持

精选活动

关于我们

帮助中心

K9F2808U0C

K9F2808U0C 数据手册

与K9F2808U0C相关器件

与K9F2808U0C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K9F2808U0C

K9F2808U0C 数据手册

与K9F2808U0C相关器件

与K9F2808U0C相关文章

您还可以找

您在本页遇到什么问题？