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K9F2808U0C-VIB0 PDF预览

K9F2808U0C-VIB0

更新时间: 2024-01-17 15:47:56
品牌 Logo 应用领域
三星 - SAMSUNG 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
33页 580K
描述
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory

K9F2808U0C-VIB0 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:12 X 17 MM, 0.70 MM HEIGHT, PLASTIC, WSOP1-48
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.84Is Samacsys:N
最长访问时间:30 ns其他特性:CONTAINS ADDITIONAL 4M BIT NAND FLASH
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:15.4 mm内存密度:134217728 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1K
端子数量:48字数:16777216 words
字数代码:16000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:16MX8封装主体材料:PLASTIC/EPOXY
封装代码:VSSOP封装等效代码:TSSOP48,.71,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
页面大小:512 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
编程电压:2.7 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:0.7 mm
部门规模:16K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NAND TYPE宽度:12 mm
Base Number Matches:1

K9F2808U0C-VIB0 数据手册

 浏览型号K9F2808U0C-VIB0的Datasheet PDF文件第2页浏览型号K9F2808U0C-VIB0的Datasheet PDF文件第3页浏览型号K9F2808U0C-VIB0的Datasheet PDF文件第4页浏览型号K9F2808U0C-VIB0的Datasheet PDF文件第5页浏览型号K9F2808U0C-VIB0的Datasheet PDF文件第6页浏览型号K9F2808U0C-VIB0的Datasheet PDF文件第7页 
K9F2808Q0C-DCB0,DIB0 K9F2816Q0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0  
K9F2808U0C-YCB0,YIB0 K9F2816U0C-YCB0,YIB0  
K9F2808U0C-DCB0,DIB0 K9F2816U0C-DCB0,DIB0  
FLASH MEMORY  
Document Title  
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial issue.  
Apr. 15th 2002  
Advance  
1.0  
TBGA PKG Dimension Change  
Sep. 5th 2002  
Advance  
48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm  
2.0  
1.A3 Pin assignment of TBGA Package is changed.(Page 4)  
(before) NC --> (after) Vss  
Dec.10th 2002  
Preliminary  
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32)  
3. Add the data protection Vcc guidence for 1.8V device - below about  
1.1V. (Page 33)  
Mar. 6th 2003  
2.1  
The min. Vcc value 1.8V devices is changed.  
K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V  
Pb-free Package is added.  
K9F2808U0C-FCB0,FIB0  
K9F2808Q0C-HCB0,HIB0  
K9F2816U0C-HCB0,HIB0  
K9F2816U0C-PCB0,PIB0  
K9F2816Q0C-HCB0,HIB0  
K9F2808U0C-HCB0,HIB0  
K9F2808U0C-PCB0,PIB0  
Mar. 13rd 2003  
2.2  
Some AC parameter is changed(K9F28XXQ0C).  
tWC tWH tWP tRC tREH tRP tREA tCEA  
Mar. 26th 2003  
May. 24th 2003  
2.3  
2.4  
Before 45 15 25 50 15 25 30  
After 60 20 40 60 20 40 40  
45  
55  
New definition of the number of invalid blocks is added.  
(Minimum 502 valid blocks are guaranteed for each contiguous 64Mb  
memory space)  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
1

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