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K9F2808U0B-VIB0 PDF预览

K9F2808U0B-VIB0

更新时间: 2024-11-04 22:15:59
品牌 Logo 应用领域
三星 - SAMSUNG 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
29页 305K
描述
16M x 8 Bit NAND Flash Memory

K9F2808U0B-VIB0 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:12 X 17 MM, 0.70 MM HEIGHT, PLASTIC, WSOP1-48
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.84最长访问时间:35 ns
其他特性:CONTAINS ADDITIONAL 512K X 8 BIT NAND FLASH命令用户界面:YES
数据轮询:NOJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:15.4 mm
内存密度:134217728 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:1K端子数量:48
字数:16777216 words字数代码:16000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16MX8
封装主体材料:PLASTIC/EPOXY封装代码:VSSOP
封装等效代码:TSSOP48,.71,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH页面大小:512 words
并行/串行:PARALLEL电源:3.3 V
编程电压:2.7 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:0.7 mm
部门规模:16K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:NO类型:SLC NAND TYPE
宽度:12 mmBase Number Matches:1

K9F2808U0B-VIB0 数据手册

 浏览型号K9F2808U0B-VIB0的Datasheet PDF文件第2页浏览型号K9F2808U0B-VIB0的Datasheet PDF文件第3页浏览型号K9F2808U0B-VIB0的Datasheet PDF文件第4页浏览型号K9F2808U0B-VIB0的Datasheet PDF文件第5页浏览型号K9F2808U0B-VIB0的Datasheet PDF文件第6页浏览型号K9F2808U0B-VIB0的Datasheet PDF文件第7页 
K9F2808U0B-YCB0,YIB0  
K9F2808Q0B-DCB0,DIB0  
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0  
FLASH MEMORY  
Document Title  
16M x 8 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
0.1  
0.2  
Initial issue.  
May 28’ th 2001  
Advance  
K9F2808U0B(3.3V device)’ s qualification is finished  
Jun. 30th 2001  
Jul. 30th 2001  
K9F2808Q0B (1.8V device)  
- Changed typical read operation current (Icc1) from 8mA to 5mA  
- Changed typical program operation current (Icc2) from 8mA to 5mA  
- Changed typical erase operation current (Icc3) from 8mA to 5mA  
- Changed typical program time(tPROG) from 200us to 300us  
- Changed ALE to RE Delay (ID read, tAR1) from 100ns to 20ns  
- Changed CLE hold time(tCLH) from 10ns to 15ns  
- Changed CE hold time(tCH) from 10ns to 15ns  
K9F2808Q0B  
: Preliminary  
- Changed ALE hold time(tALH) from 10ns to 15ns  
- Changed Data hold time(tDH) from 10ns to 15ns  
- Changed CE Access time(tCEA) from 45ns to 60ns  
- Changed Read cycle time(tRC) from 50ns to 70ns  
- Changed Write Cycle time(tWC) from 50ns to 70ns  
- Changed RE Access time(tREA) from 35ns to 40ns  
- Changed RE High Hold time(tREH) from 15ns to 20ns  
- Changed WE High Hold time(tWH) from 15ns to 20ns  
0.3  
1. Device Code is changed  
- TBGA package information : ’ B’ --> ’ D’  
Aug. 23th 2001  
ex) K9F2808Q0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0  
K9F2808U0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0  
2. VIH ,VIL of K9F2808Q0B(1.8 device) is changed  
(before revision)  
I/O pins  
VccQ-0.4  
VCC-0.4  
VccQ  
VCC  
Input High Voltage  
VIH  
VIL  
Except I/O pins  
-
-
Input Low Voltage,  
All inputs  
-
0
0.4  
(after revision)  
VccQ-0.4  
VccQ  
+0.3  
I/O pins  
Input High Voltage  
VIH  
VIL  
VCC  
+0.3  
Except I/O pins  
-
VCC-0.4  
-0.3  
-
-
Input Low Voltage,  
All inputs  
0.4  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site.  
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
1

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