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K9F2808U0B-VIB00 PDF预览

K9F2808U0B-VIB00

更新时间： 2024-11-22 07:00:39
品牌 Logo 应用领域
三星 - SAMSUNG 光电二极管内存集成电路
页数 文件大小 规格书
30页 507K
描述
Flash, 16MX8, 35ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, PLASTIC, WSOP1-48

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K9F2808U0B-VIB00 技术参数

生命周期：Obsolete零件包装代码：SOIC
包装说明：12 X 17 MM, 0.70 MM HEIGHT, PLASTIC, WSOP1-48针数：48
Reach Compliance Code：unknownECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.77
最长访问时间：35 ns其他特性：CONTAINS ADDITIONAL 4M BIT SPARE MEMORY
JESD-30 代码：R-PDSO-G48长度：15.4 mm
内存密度：134217728 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：48字数：16777216 words
字数代码：16000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：16MX8封装主体材料：PLASTIC/EPOXY
封装代码：VSSOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH并行/串行：PARALLEL
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：0.7 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
类型：NAND TYPE宽度：12 mm
Base Number Matches：1

K9F2808U0B-VIB00 数据手册

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K9F2808Q0B  
K9F2808U0B  
FLASH MEMORY  
Document Title  
16M x 8 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
0.1  
0.2  
Initial issue.  
May 28th 2001  
Advance  
K9F2808U0B(3.3V device)’s qualification is finished  
Jun. 30th 2001  
Jul. 30th 2001  
K9F2808Q0B (1.8V device)  
- Changed typical read operation current (Icc1) from 8mA to 5mA  
- Changed typical program operation current (Icc2) from 8mA to 5mA  
- Changed typical erase operation current (Icc3) from 8mA to 5mA  
- Changed typical program time(tPROG) from 200us to 300us  
- Changed ALE to RE Delay (ID read, tAR1) from 100ns to 20ns  
- Changed CLE hold time(tCLH) from 10ns to 15ns  
- Changed CE hold time(tCH) from 10ns to 15ns  
K9F2808Q0B  
: Preliminary  
- Changed ALE hold time(tALH) from 10ns to 15ns  
- Changed Data hold time(tDH) from 10ns to 15ns  
- Changed CE Access time(tCEA) from 45ns to 60ns  
- Changed Read cycle time(tRC) from 50ns to 70ns  
- Changed Write Cycle time(tWC) from 50ns to 70ns  
- Changed RE Access time(tREA) from 35ns to 40ns  
- Changed RE High Hold time(tREH) from 15ns to 20ns  
- Changed WE High Hold time(tWH) from 15ns to 20ns  
0.3  
1. Device Code is changed  
- TBGA package information : ’B’ --> ’D’  
Aug. 23th 2001  
ex) K9F2808Q0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0  
K9F2808U0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0  
2. VIH ,VIL of K9F2808Q0B(1.8 device) is changed  
(before revision)  
I/O pins  
VccQ-0.4  
VCC-0.4  
VccQ  
VCC  
Input High Voltage  
VIH  
VIL  
Except I/O pins  
-
-
Input Low Voltage,  
All inputs  
-
0
0.4  
(after revision)  
VccQ-0.4  
VccQ+  
0.3  
I/O pins  
Input High Voltage  
VIH  
VIL  
VCC  
+0.3  
Except I/O pins  
-
VCC-0.4  
-0.3  
-
-
Input Low Voltage,  
All inputs  
0.4  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
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K9F2808U0B-Y SAMSUNG

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K9F2808U0B-YCB0 SAMSUNG

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K9F2808U0B-YCB00 SAMSUNG

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 		Flash, 16MX8, 35ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9F2808U0B-YIB0 SAMSUNG

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 		16M x 8 Bit NAND Flash Memory
K9F2808U0B-YIB00 SAMSUNG

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 		Flash, 16MX8, 35ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9F2808U0C SAMSUNG

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 		16M x 8 Bit NAND Flash Memory
K9F2808U0C-BIB0 SAMSUNG

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 		Flash, 16MX8, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48
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 		16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0C-DCB00 SAMSUNG

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 		Flash, 16MX8, 30ns, PBGA63, 9 X 11 MM, 0.80 MM PITCH, TBGA-63
K9F2808U0C-DIB0 SAMSUNG

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 		16M x 8 Bit , 8M x 16 Bit NAND Flash Memory

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