Datasheet > K9F2808U0B-DCB00

K9F2808U0B-DCB00

更新时间： 2024-01-16 13:45:10

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
30页	507K
描述
Flash, 16MX8, 35ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63

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K9F2808U0B-DCB00 数据手册

K9F2808Q0B

K9F2808U0B

FLASH MEMORY

16M x 8 Bit Bit NAND Flash Memory

PRODUCT LIST

Part Number

K9F2808Q0B-D

K9F2808U0B-Y

K9F2808U0B-D

K9F2808U0B-V

Vcc Range

Organization

PKG Type

TBGA

1.7 ~ 1.95V

TSOP1

TBGA

2.7 ~ 3.6V

WSOP1

FEATURES

· Voltage Supply

· Command/Address/Data Multiplexed I/O Port

· Hardware Data Protection

- Program/Erase Lockout During Power Transitions

· Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

· Command Register Operation

· Package

- K9F2808U0B-YCB0/YIB0 :

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F2808X0B-DCB0/DIB0

- K9F2808Q0B : 1.7~1.95V

- K9F2808U0B : 2.7 ~ 3.6 V

· Organization

- Memory Cell Array : (16M + 512K)bit x 8bit

- Data Register : (512 + 16)bit x8bit

· Automatic Program and Erase

- Page Program : (512 + 16)Byte

- Block Erase : (16K + 512)Byte

· 528-Byte Page Read Operation

- Random Access : 10ms(Max.)

- Serial Page Access

63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)

- K9F2808U0B-VCB0/VIB0

- K9F2808Q0B : 70ns

- K9F2808U0B : 50ns

· Fast Write Cycle Time

- Program Time

48 - Pin WSOP I (12X17X0.7mm)

* K9F2808U0B-V(WSOPI ) is the same device as

K9F2808U0B-Y(TSOP1) except package type.

- K9F2808Q0B : 300ms(Typ.)

- K9F2808U0B : 200ms(Typ.)

- Block Erase Time : 2ms(Typ.)

GENERAL DESCRIPTION

The K9F2808X0B is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The device is offered in 1.8V or

3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can

be performed programs in typical 200ms on a 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte

block. Data in a page can be read out at 70ns/50ns(K9F2808Q0B:70ns, K9F2808U0B:50ns) cycle time per byte. The I/O pins serve

as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase

functions including pulse repetition, where required, and internal verification and margining of data. Even write-intensive systems can

take advantage of the K9F2808X0B’s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code)

with real time mapping-out algorithm.

The K9F2808X0B is suitable for use in data memory of mobile communication system to reduce not only mount area but also power

consumption.

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与K9F2808U0B-DCB00相关器件

型号	品牌	描述	获取价格	数据表
K9F2808U0B-DIB0	SAMSUNG	16M x 8 Bit NAND Flash Memory	获取价格
K9F2808U0B-V	SAMSUNG	16M x 8 Bit NAND Flash Memory	获取价格
K9F2808U0B-VCB0	SAMSUNG	16M x 8 Bit NAND Flash Memory	获取价格
K9F2808U0B-VIB0	SAMSUNG	16M x 8 Bit NAND Flash Memory	获取价格
K9F2808U0B-VIB00	SAMSUNG	Flash, 16MX8, 35ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, PLASTIC, WSOP1-48	获取价格
K9F2808U0B-Y	SAMSUNG	16M x 8 Bit NAND Flash Memory	获取价格