5秒后页面跳转
K9F2808U0B-DCB00 PDF预览

K9F2808U0B-DCB00

更新时间: 2024-02-17 18:41:55
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
30页 507K
描述
Flash, 16MX8, 35ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63

K9F2808U0B-DCB00 数据手册

 浏览型号K9F2808U0B-DCB00的Datasheet PDF文件第1页浏览型号K9F2808U0B-DCB00的Datasheet PDF文件第3页浏览型号K9F2808U0B-DCB00的Datasheet PDF文件第4页浏览型号K9F2808U0B-DCB00的Datasheet PDF文件第5页浏览型号K9F2808U0B-DCB00的Datasheet PDF文件第6页浏览型号K9F2808U0B-DCB00的Datasheet PDF文件第7页 
K9F2808Q0B  
K9F2808U0B  
FLASH MEMORY  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.4  
1. IOL(R/B) of 1.8V device is changed.  
Nov 5th 2001  
Preliminary  
-min. Value: 7mA -->3mA  
-typ. Value: 8mA -->4mA  
2. AC parameter is changed.  
tRP(min.) : 30ns --> 25ns  
0.5  
Feb 15th 2002  
1. Parameters are changed in 1.8V part(K9F2808Q0B) .  
- tCH is changed from 15ns to 20ns  
- tCLH is changed from 15ns to 20ns  
- tALH is changed from 15ns to 20ns  
- tDH is changed from 15ns to 20ns  
0.6  
0.7  
May 3rd 2002  
1. Parameters are changed in 1.8V part(K9F2808Q0B) .  
- tRP is changed from 25ns to 35ns  
- tWB is changed from 100ns to 150ns  
- tREA is changed from 40ns to 45ns  
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device  
2. The min. Vcc value 1.8V devices is changed.  
Jul 14th 2003  
K9F28XXQ0B : Vcc 1.65V~1.95V --> 1.70V~1.95V  
3. New definition of the number of invalid blocks is added.  
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb  
memory space.)  
4. Note is added.  
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for  
durations of 20 ns or less.)  
0.8  
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.  
2. PKG(TSOP1, WSOP1) Dimension Change  
May 21th 2004  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
2

与K9F2808U0B-DCB00相关器件

型号 品牌 描述 获取价格 数据表
K9F2808U0B-DIB0 SAMSUNG 16M x 8 Bit NAND Flash Memory

获取价格

K9F2808U0B-V SAMSUNG 16M x 8 Bit NAND Flash Memory

获取价格

K9F2808U0B-VCB0 SAMSUNG 16M x 8 Bit NAND Flash Memory

获取价格

K9F2808U0B-VIB0 SAMSUNG 16M x 8 Bit NAND Flash Memory

获取价格

K9F2808U0B-VIB00 SAMSUNG Flash, 16MX8, 35ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, PLASTIC, WSOP1-48

获取价格

K9F2808U0B-Y SAMSUNG 16M x 8 Bit NAND Flash Memory

获取价格

K9F2808U0B-YCB0 SAMSUNG 16M x 8 Bit NAND Flash Memory

获取价格

K9F2808U0B-YCB00 SAMSUNG Flash, 16MX8, 35ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48

获取价格

K9F2808U0B-YIB0 SAMSUNG 16M x 8 Bit NAND Flash Memory

获取价格

K9F2808U0B-YIB00 SAMSUNG Flash, 16MX8, 35ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48

获取价格

K9F2808U0C SAMSUNG 16M x 8 Bit NAND Flash Memory

获取价格

K9F2808U0C-BIB0 SAMSUNG Flash, 16MX8, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48

获取价格

K9F2808U0C-DCB0 SAMSUNG 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory

获取价格

K9F2808U0C-DCB00 SAMSUNG Flash, 16MX8, 30ns, PBGA63, 9 X 11 MM, 0.80 MM PITCH, TBGA-63

获取价格

K9F2808U0C-DIB0 SAMSUNG 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory

获取价格

K9F2808U0C-DIB00 SAMSUNG Flash, 16MX8, 30ns, PBGA63, 9 X 11 MM, 0.80 MM PITCH, TBGA-63

获取价格

K9F2808U0C-F SAMSUNG 16M x 8 Bit NAND Flash Memory

获取价格

K9F2808U0C-FCB0 SAMSUNG 16M x 8 Bit NAND Flash Memory

获取价格

K9F2808U0C-FCB00 SAMSUNG Flash, 16MX8, 30ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48

获取价格

K9F2808U0C-FCB0T SAMSUNG Flash, 16MX8, 30ns, PDSO48

获取价格