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K7P163666A-HC25 PDF预览

K7P163666A-HC25

更新时间: 2024-11-14 03:47:11
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路静态存储器
页数 文件大小 规格书
14页 322K
描述
512Kx36 AND 1Mx18 Synchronous Pipelined SRAM

K7P163666A-HC25 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:BGA, BGA119,7X17,50
针数:119Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92Is Samacsys:N
最长访问时间:2 ns其他特性:PIPELINED ARCHITECTURE
I/O 类型:COMMONJESD-30 代码:R-PBGA-B119
JESD-609代码:e0长度:20 mm
内存密度:18874368 bit内存集成电路类型:STANDARD SRAM
内存宽度:36功能数量:1
端子数量:119字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA119,7X17,50封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.5,2.5 V
认证状态:Not Qualified座面最大高度:2.2 mm
最小待机电流:2.37 V子类别:SRAMs
最大压摆率:0.55 mA最大供电电压 (Vsup):2.63 V
最小供电电压 (Vsup):2.37 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

K7P163666A-HC25 数据手册

 浏览型号K7P163666A-HC25的Datasheet PDF文件第2页浏览型号K7P163666A-HC25的Datasheet PDF文件第3页浏览型号K7P163666A-HC25的Datasheet PDF文件第4页浏览型号K7P163666A-HC25的Datasheet PDF文件第5页浏览型号K7P163666A-HC25的Datasheet PDF文件第6页浏览型号K7P163666A-HC25的Datasheet PDF文件第7页 
K7P163666A  
K7P161866A  
512Kx36 & 1Mx18 SRAM  
Document Title  
512Kx36 & 1Mx18 Synchronous Pipelined SRAM  
Revision History  
Draft Date  
Remark  
Rev. No.  
History  
Dec. 2001  
Advance  
Rev. 0.0  
- Initial Document  
Oct. 2002  
Advance  
Rev. 0.1  
- Absolute maximum ratings are changed  
VDD : 2.815 - > 3.13  
VDDQ : 2.815 - > 2.4  
VTERM : 2.815 - > VDDQ+0.5 (2.4V MAX)  
- Recommended DC operating conditions are changed  
VREF / VCM-CLK : 0.68 - > 0.6, 0.95 - > 0.9  
- DC characteristics is changed  
ISBZZ : 150 - > 128  
- AC Characteristics are changed  
TAVKH / TDVKH / TWVKH / TSVKH : 0.4 / 0.5 / 0.5 - > 0.3 / 0.3 / 0.3  
TKHAX / TKHDX / TKHWX / TKHSX : 0.5 / 0.5 / 0.5 - > 0.5 / 0.6 / 0.6  
Jan. 2003  
Sep. 2003  
Advance  
Final  
Rev. 0.2  
Rev. 0.3  
- Recommended DC operating condition is changed  
Max VDIF-CLK : VDDQ+0.3 -> VDDQ+0.6  
- Correct typo  
VDD -> VDDQ: in MODE CONTROL at page4  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Sep. 2003  
- 1 -  
Rev 0.3  

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Standard SRAM, 512KX36, 2ns, CMOS, PBGA119, BGA-119
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K7P163666M-HC300 SAMSUNG

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Standard SRAM, 512KX36, 1.6ns, CMOS, PBGA119, BGA-119
K7P163666M-HC33 SAMSUNG

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