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K7P163612M-HC43 PDF预览

K7P163612M-HC43

更新时间: 2024-11-14 20:38:35
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
13页 245K
描述
Standard SRAM, 512KX36, 4.3ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FLIP CHIP, BGA-119

K7P163612M-HC43 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:BGA, BGA119,7X17,50
针数:119Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92Base Number Matches:1

K7P163612M-HC43 数据手册

 浏览型号K7P163612M-HC43的Datasheet PDF文件第2页浏览型号K7P163612M-HC43的Datasheet PDF文件第3页浏览型号K7P163612M-HC43的Datasheet PDF文件第4页浏览型号K7P163612M-HC43的Datasheet PDF文件第5页浏览型号K7P163612M-HC43的Datasheet PDF文件第6页浏览型号K7P163612M-HC43的Datasheet PDF文件第7页 
K7P163612M  
K7P161812M  
512Kx36 & 1Mx18 SRAM  
Document Title  
512Kx36 & 1Mx18 Synchronous Pipelined SRAM(Register-Latch)  
Revision History  
Draft Date  
Remark  
Rev. No.  
History  
Aug. 2000  
Advance  
Rev. 0.0  
- Initial Document  
Dec. 2001  
Jan. 2002  
Final  
Final  
Rev. 1.0  
Rev. 2.0  
- VDDQ Min. changed to 1.4V  
- Package thermal characteristics added.  
- Absolute Maximum Rating VDDQ changed from 2.8V to 2.3V  
Not yet Distributed. Metal Lid PKG need to be added  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Rev 2.0  
Jan. 2002  
- 1 -  

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Standard SRAM, 512KX36, 1.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
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Standard SRAM, 512KX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FLIP CHIP, BGA-119