Datasheet > K6T1008C2C-P

K6T1008C2C-P

更新时间： 2024-09-19 22:28:11

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
10页	191K
描述
128K x8 bit Low Power CMOS Static RAM

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中文翻译

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数据手册

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K6T1008C2C-P 数据手册

PRELIMINARY

K6T1008C2C Family

CMOS SRAM

Document Title

128K x8 bit Low Power CMOS Static RAM

Revision History

Revision No.

History

Draft Date

Remark

0.0

Initial draft

November 22, 1995

April 15, 1996

Design target

Preliminary

0.1

1.0

2.0

First revision

- Seperate read and write at ICC, ICC1

ICC = ICC1 ® Read : 15mA, Write : 35mA

Finalized

September 5, 1996

November 5, 1997

Final

- Add 70ns speed bin for commercial product and 85ns speed

bin for industrial.

Revised

- Improved operating current

Add typical value.

ICC Read : 15mA ® 10mA(Remove write current)

ICC2 : 90mA ® 60mA

- Speed bin change

Remove 45ns from commercial part

Remove 55ns and 100ns from industrial part.

The attached data sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 2.0

November 1997

12 3 4 5 6 7...10

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与K6T1008C2C-P相关器件

型号	品牌	获取价格	描述	数据表
K6T1008C2C-RB55	SAMSUNG	获取价格	128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-RB550	SAMSUNG	获取价格	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32
K6T1008C2C-RB70	SAMSUNG	获取价格	128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-RB70T	SAMSUNG	获取价格	暂无描述
K6T1008C2C-RF70	SAMSUNG	获取价格	128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-TB55	SAMSUNG	获取价格	128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-TB70	SAMSUNG	获取价格	128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-TB70T	SAMSUNG	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32
K6T1008C2C-TF70	SAMSUNG	获取价格	128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-TF700	SAMSUNG	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32