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K6T1008C2C-TB70T PDF预览

K6T1008C2C-TB70T

更新时间: 2024-11-08 13:09:03
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
10页 191K
描述
Standard SRAM, 128KX8, 70ns, CMOS, PDSO32

K6T1008C2C-TB70T 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:TSSOP, TSSOP32,.8,20Reach Compliance Code:unknown
风险等级:5.92Is Samacsys:N
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP32,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified最小待机电流:2 V
子类别:SRAMs最大压摆率:0.06 mA
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
Base Number Matches:1

K6T1008C2C-TB70T 数据手册

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PRELIMINARY  
K6T1008C2C Family  
CMOS SRAM  
Document Title  
128K x8 bit Low Power CMOS Static RAM  
Revision History  
Revision No.  
History  
Draft Date  
Remark  
0.0  
Initial draft  
November 22, 1995  
April 15, 1996  
Design target  
Preliminary  
0.1  
1.0  
2.0  
First revision  
- Seperate read and write at ICC, ICC1  
ICC = ICC1 ® Read : 15mA, Write : 35mA  
Finalized  
September 5, 1996  
November 5, 1997  
Final  
Final  
- Add 70ns speed bin for commercial product and 85ns speed  
bin for industrial.  
Revised  
- Improved operating current  
Add typical value.  
ICC Read : 15mA ® 10mA(Remove write current)  
ICC2 : 90mA ® 60mA  
- Speed bin change  
Remove 45ns from commercial part  
Remove 55ns and 100ns from industrial part.  
The attached data sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 2.0  
1
November 1997  

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