Datasheet > K6R1016V1D-TC12

K6R1016V1D-TC12

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
11页	267K
描述
Standard SRAM, 64KX16, 12ns, CMOS, PDSO44

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K6R1016V1D-TC12 数据手册

Preliminary

for AT&T

CMOS SRAM

K6R1016V1D-C/D-I/D-P

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev.No.

History

Draft Data

Remark

Rev. 0.0

Rev. 0.1

Rev. 0.2

Initial document.

Speed bin modify

Current modify

May. 11. 2001

June. 18. 2001

September. 9. 2001

Preliminary

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Revision 0.2

September 2001

- 1 -

12 3 4 5 6 7...11

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与K6R1016V1D-TC12相关器件

型号	品牌	获取价格	描述	数据表
K6R1016V1D-TC12T	SAMSUNG	获取价格	Standard SRAM, 64KX16, 12ns, CMOS, PDSO44
K6R1016V1D-TI08	SAMSUNG	获取价格	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016V1D-TI08/10	SAMSUNG	获取价格	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industria
K6R1016V1D-TI08T	SAMSUNG	获取价格	Standard SRAM, 64KX16, 8ns, CMOS, PDSO44
K6R1016V1D-TI10	SAMSUNG	获取价格	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016V1D-TI100	SAMSUNG	获取价格	Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6R1016V1D-UC08	SAMSUNG	获取价格	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016V1D-UC08/10	SAMSUNG	获取价格	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industria
K6R1016V1D-UC080	SAMSUNG	获取价格	Standard SRAM, 64KX16, 8ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
K6R1016V1D-UC10	SAMSUNG	获取价格	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).