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JS28F128J3D75D

更新时间： 2024-02-23 17:50:16
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路闪存
页数 文件大小 规格书
66页 959K
描述
Flash, 8MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56

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JS28F128J3D75D 技术参数

生命周期：Obsolete零件包装代码：TSOP
包装说明：14 X 20 MM, LEAD FREE, TSOP-56针数：56
Reach Compliance Code：unknownECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.69
最长访问时间：75 ns备用内存宽度：8
JESD-30 代码：R-PDSO-G56JESD-609代码：e3
长度：18.4 mm内存密度：134217728 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1端子数量：56
字数：8388608 words字数代码：8000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：8MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：TIN
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
类型：NOR TYPE宽度：14 mm

JS28F128J3D75D 数据手册

 浏览型号JS28F128J3D75D的Datasheet PDF文件第3页浏览型号JS28F128J3D75D的Datasheet PDF文件第4页浏览型号JS28F128J3D75D的Datasheet PDF文件第5页浏览型号JS28F128J3D75D的Datasheet PDF文件第7页浏览型号JS28F128J3D75D的Datasheet PDF文件第8页浏览型号JS28F128J3D75D的Datasheet PDF文件第9页 
Intel® Embedded Flash Memory (J3 v. D)  
1.0  
Introduction  
This document contains information pertaining to the Intel® Embedded Flash Memory  
(J3 v. D) device features, operation, and specifications.  
The Intel® Embedded Flash Memory J3 Version D (J3 v. D) provides improved  
mainstream performance with enhanced security features, taking advantage of the  
high quality and reliability of the NOR-based Intel 0.13 µm ETOX™ VIII process  
technology. Offered in 256-Mbit, 128-Mbit, 64-Mbit, and 32-Mbit densities, theIntel®  
Embedded Flash Memory (J3 v. D)device brings reliable, low-voltage capability (3 V  
read, program, and erase) with high speed, low-power operation. The Intel® Embedded  
Flash Memory (J3 v. D) device takes advantage of proven manufacturing experience  
and is ideal for code and data applications where high density and low cost are  
required, such as in networking, telecommunications, digital set top boxes, audio  
recording, and digital imaging.Intel® Flash Memory components also deliver a new  
generation of forward-compatible software support. By using the Common Flash  
Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of  
density upgrades and optimized write capabilities of future Intel® Flash Memory  
devices.  
The J3v.D product family is also planned on the Intel 65nm process lithography, 65nm  
AC timing changes are noted in this datasheet and should be taken into account for all  
new designs.  
1.1  
Nomenclature  
All Densities  
All Densities  
32 Mbit  
AMIN = A0 for x8  
AMIN = A1 for x16  
AMAX = A21  
AMIN  
AMAX  
64 Mbit  
AMAX = A22  
128 Mbit  
256 Mbit  
AMAX = A23  
AMAX = A24  
Block  
Clear  
Program  
Set  
A group of flash cells that share common erase circuitry and erase simultaneously.  
Indicates a logic zero (0)  
Writes data to the flash array  
Indicates a logic one (1)  
VPEN  
VPEN  
Refers to a signal or package connection name  
Refers to timing or voltage levels  
1.2  
Acronyms  
CUI  
OTP  
PLR  
Command User Interface  
One Time Programmable  
Protection Lock Register  
Datasheet  
6
December 2007  
Document Number: 316577-006  
1...3456789...66

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与JS28F128J3D75D相关器件

型号 品牌 描述 获取价格 数据表
JS28F128J3D75E NUMONYX Flash, 8MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56

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JS28F128J3D75G NUMONYX Flash, 8MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56

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JS28F128J3F75 NUMONYX Flash, 8MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56

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JS28F128J3F-75 NUMONYX Flash, 8MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56

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JS28F128J3F75A NUMONYX Flash, 8MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56

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JS28F128J3F75A MICRON Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard

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