5秒后页面跳转
JS28F128J3D75G PDF预览

JS28F128J3D75G

更新时间: 2023-02-15 00:00:00
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路存储闪存
页数 文件大小 规格书
66页 959K
描述
Flash, 8MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56

JS28F128J3D75G 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:14 X 20 MM, LEAD FREE, TSOP-56针数:56
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.69
最长访问时间:75 ns备用内存宽度:8
JESD-30 代码:R-PDSO-G56JESD-609代码:e3
长度:18.4 mm内存密度:134217728 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:56
字数:8388608 words字数代码:8000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:14 mm

JS28F128J3D75G 数据手册

 浏览型号JS28F128J3D75G的Datasheet PDF文件第2页浏览型号JS28F128J3D75G的Datasheet PDF文件第3页浏览型号JS28F128J3D75G的Datasheet PDF文件第4页浏览型号JS28F128J3D75G的Datasheet PDF文件第5页浏览型号JS28F128J3D75G的Datasheet PDF文件第6页浏览型号JS28F128J3D75G的Datasheet PDF文件第7页 
®
Intel Embedded Flash Memory (J3 v. D)  
32, 64, 128, and 256 Mbit (Monolithic)  
Datasheet  
Product Features  
„ Architecture  
„ Security  
— Symmetrical 128-Kbyte blocks  
— 256 Mbit (256 blocks)  
— 128 Mbit (128 blocks)  
— 64 Mbit (64 blocks)  
— 32 Mbit (32 blocks)  
— Enhanced security options for code  
protection  
— 128-bit Protection Register:  
64-bits Unique device identifier bits  
64-bits User-programmable OTP bits  
— Absolute protection with VPEN = GND  
— Individual block locking  
„ Performance  
— Block erase/program lockout during power  
transitions  
— 75 ns Initial Access Speed (32,64,128  
Mbit densities)  
— 95 ns Initial Access Speed (256Mbit only)  
— 25 ns 8-word and 4-word Asynchronous  
page-mode reads  
„ Software  
— Program and erase suspend support  
— Flash Data Integrator (FDI), Common Flash  
Interface (CFI) Compatible  
— 32-Byte Write buffer;  
4 µs per Byte Effective programming time  
„ Quality and Reliability  
„ System Voltage  
— Operating temperature:  
-40 °C to +85 °C  
— 100K Minimum erase cycles per block  
— 0.13 µm ETOX™ VIII Process technology  
— VCC = 2.7 V to 3.6 V  
— VCCQ = 2.7 V to 3.6 V  
„ Packaging  
— 56-Lead TSOP (32, 64, 128, 256 Mbit)  
— 64-Ball Intel® Easy BGA package (32, 64,  
128 and 256 Mbit)  
Document Number: 316577-006  
December 2007  

与JS28F128J3D75G相关器件

型号 品牌 获取价格 描述 数据表
JS28F128J3F75 NUMONYX

获取价格

Flash, 8MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F128J3F-75 NUMONYX

获取价格

Flash, 8MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F128J3F75A NUMONYX

获取价格

Flash, 8MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F128J3F75A MICRON

获取价格

Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F128J3F75B MICRON

获取价格

Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F128J3F75D MICRON

获取价格

Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F128J3F75H MICRON

获取价格

Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F128M29EWHF MICRON

获取价格

Parallel NOR Flash Embedded Memory
JS28F128M29EWLA MICRON

获取价格

Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F128M29EWXX MICRON

获取价格

Parallel NOR Flash Embedded Memory