Datasheet > JMTE035N04A

JMTE035N04A

更新时间： 2023-12-06 19:59:54

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描述
中压 N-ch (40V ~ 400V)

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JMTE035N04A 数据手册

JMTE035N04A

Electrical Characteristics (T_J=25℃ unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ. Max. Units

Off Characteristic

V_(BR)DSS

I_DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

V_GS=0V, I_D=250μA

V_DS=40V, V_GS=0V,

V_DS=0V, V_GS= ±20V

1.0

μA

I_GSS

±100

On Characteristics

V_GS(th)Gate Threshold Voltage

V_DS=V_GS, I_D=250μA

V_GS=10V, I_D=30A

2.8

Static Drain-Source on-Resistance

R_DS(on)

mΩ

note3

Dynamic Characteristics

C_iss

C_oss

C_rss

Q_g

Input Capacitance

4900

528

317

V_DS=20V, V_GS=0V,

f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V_DS=20V, I_D=30A,

V_GS=10V

Q_gs

Q_gd

Gate-Source Charge

Gate-Drain(“Miller”) Charge

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

V_DD=20V, I_D=30A,

R_L=1Ω, R_GEN=3Ω,

V_GS=10V

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain to Source Diode Forward

I_S

150

600

1.2

Current

I_SM

V_SD

t_rr

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward

V_GS=0V, I_S=30A

Voltage

Body Diode Reverse Recovery Time

T_J=25℃,

Body Diode Reverse Recovery

I_F=20A,dI/dt=100A/μs

Charge

Q_rr

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. EAS condition : T_J=25℃,V_DD=20V,V_G=10V,L=0.5mH,Rg=25Ω,I_AS=33A

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%

JieJie Microelectronics CO. , Ltd

Version :1.0

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