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JMTE070N07A PDF预览

JMTE070N07A

更新时间: 2024-11-24 14:53:19
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页数 文件大小 规格书
6页 536K
描述
中压 N-ch (40V ~ 400V)

JMTE070N07A 数据手册

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JMTE070N07A  
Description  
JMT N-channel Enhancement Mode Power MOSFET  
Features  
Application  
68V, 120A  
Load Switch  
RDS(ON)<7.5mΩ @ VGS =10V  
PWM Application  
Advanced Trench Technology  
Power management  
Provide Excellent RDS(ON) and Low Gate Charge  
Lead free product is acquired  
100% UIS TESTED!  
100% ΔVds TESTED!  
TO-263 top view  
Marking and pin Assignment  
Schematic Diagram  
Package Marking and Ordering Information  
Reel  
Size  
Reel  
Per Carton  
Device Marking  
Device  
OUTLINE  
Device Package  
(PCS)  
(PCS)  
JMTE070N07A  
JMTE070N07A  
TAPING  
TO-263  
13inch  
800  
4000  
Absolute Maximum Ratings (TC=25unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Max.  
Units  
VDSS  
VGSS  
68  
±20  
120  
78  
V
V
Gate-Source Voltage  
TC = 25  
A
ID  
Continuous Drain Current  
Pulsed Drain Current note1  
Single Pulsed Avalanche Energy note2  
TC = 100℃  
A
IDM  
EAS  
480  
210  
232  
0.65  
A
mJ  
W
PD  
Power Dissipation  
TC = 25℃  
RθJC  
TJ, TSTG  
Thermal Resistance, Junction to Case  
Operating and Storage Temperature Range  
/W  
-55 to +175  
JieJie Microelectronics CO. , Ltd  
Version :1.0  
- 1 -  

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