Datasheet > JMTG060P03A

JMTG060P03A

更新时间： 2024-11-24 14:53:47

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	476K
描述
低压 P-ch (-30V ~ -5V)

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中文翻译

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数据手册

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JMTG060P03A 数据手册

JMTG060P03A

Description

JMT P-channel Enhancement Mode Power MOSFET

Features

Application

 V_DS= -30V, I_D= -75A

 PWM Applications

 Load Switch

R_DS(ON)<5.4mΩ @ V_GS= -10V

R_DS(ON)<9.1mΩ @ V_GS= -4.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead Free

 Power Management

100% UIS TESTED!

100% ΔVds TESTED!

PDFN5x6-8L

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(pcs)

Per Carton

(pcs)

Device Marking

Device

Outline

Package

Reel Size

G060P03A

JMTG060P03A

TAPING

PDFN5x6-8L

13”

2500

25000

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

-30

±20

Gate-Source Voltage

T_C= 25℃

-75

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

T_C= 100℃

-49

I_DM

E_AS

-300

210

Single Pulsed Avalanche Energy ^note2

P_D

Power Dissipation

T_C= 25℃

R_θJC

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

2.3

℃/W

℃

T_J, T_STG

-55 to +150

JieJie Microelectronics Co.,Ltd.

Version :1.2

- 1 -

12 3 4 5 6

中文翻译

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