Datasheet > JMSH0803AGS

JMSH0803AGS

更新时间： 2024-04-09 18:59:17

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	557K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

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数据手册

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JMSH0803AGS 数据手册

JMSH0803AGS

Electrical Characteristics (@ T_J= 25°C unless otherwise specified)

Parameter

Conditions

Symbol

Min.

Typ.

Max.

Unit

STATIC PARAMETERS

Drain-Source Breakdown Voltage

V_(BR)DSSI_D= 250mA, V_GS= 0V

V_DS= 64V, V_GS= 0V

I_DSS

1.0

5.0

Zero Gate Voltage Drain Current

T_J= 55°C

V_DS= 0V, V_GS= ±20V

V_GS(th)V_DS= V_GS, I_D= 250mA

I_GSS

Gate-Body Leakage Current

Gate Threshold Voltage

±100

4.0

2.0

3.0

3.2

V_GS= 10V, I_D= 20A

V_DS= 5V, I_D= 20A

I_S= 1A, V_GS= 0V

T_C= 25°C

R_DS(ON)

g_FS

Static Drain-Source ON-Resistance

Forward Transconductance

Diode Forward Voltage

3.9

V_SD

I_S

0.66

1.0

Diode Continuous Current

153

DYNAMIC PARAMETERS ⁽⁵⁾

Input Capacitance

C_iss

C_oss

C_rss

R_g

2165

1404

V_GS= 0V, V_DS= 40V, f = 1MHz

V_GS= 0V, V_DS= 0V, f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

2.0

SWITCHING PARAMETERS ⁽⁵⁾

Total Gate Charge (@ V_GS= 10V)

Q_g

Q_gs

Q_gd

t_D(on)

t_r

Total Gate Charge (@ V_GS= 6.0V)

Gate Source Charge

V_GS= 0 to 10V

V_DS= 40V, I_D= 20A

12.1

8.4

13.9

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

V_GS= 10V, V_DS= 40V

R_L= 2.0W, R_GEN= 3W

t_D(off)

t_f

Turn-Off DelayTime

Turn-Off Fall Time

8.5

t_rr

I_F= 20A, dI_F/dt = 100A/ms

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

Thermal Performance

Parameter

Typ.

Max.

Symbol

R_qJA

Unit

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

0.70

0.90

R_qJC

Notes:

1. Computed continuous current assumes the condition of T_{J_Max}while the actual continuous current depends on the thermal & electro-mechanical

application board design.

2. This single-pulse measurement was taken under T_{J_Max}= 150°C.

3. E_ASof 542 mJ is based on starting T_J= 25°C, L = 3.0mH, I_AS= 19A, V_GS= 10V, V_DD= 40V; 100% test at L = 0.3mH, I_AS= 45A.

4. The power dissipation P_Dis based on T_{J_Max}= 150°C.

5. This value is guaranteed by design hence it is not included in the production test.

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.0

Page 2 of 6

123 4 5 6

中文翻译

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