JMSH1002BC
JMSH1002BE
100V 2.1m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
100
2.7
258
2.1
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Management in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
TO-220-3L Top View
TO-263-3L Top View
D
S
D
G
G
G
D
S
S
Ordering Information
Device
TJ (°C)
Package
TO-220-3L
TO-263-3L
# of Pins
Marking
SH1002B
SH1002B
MSL
N/A
1
Media
Tube
Quantity (pcs)
JMSH1002BC-U
JMSH1002BE-13
3
3
-55 to 150
-55 to 150
50
13-inch Reel
800
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
VGS
V
TC = 25°C
258
Continuous Drain
Current (1)
ID
A
TC = 100°C
163
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
820
A
A
68
EAS
694
mJ
TC = 25°C
313
Power Dissipation (4)
PD
W
TC = 100°C
125
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
10
10
8
ID = 20A
VDS = 50V
D = 20A
8
6
4
2
0
I
6
4
2
0
0
30
60
90
120
0
5
10
15
20
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.1
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