JMSH1001AE7
100V 1.6m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
100
2.7
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
VGS(th)_Typ
V
D (@ VGS = 10V) (1)
290
1.6
A
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
I
RDS(ON)_Typ (@ VGS = 10V)
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
Drain
Pin 4,Tab
TO-263-7L Top View
Gate
Pin 1
Drain conntected to tab
1
Source
Pins: 2, 3, 5, 6, 7
7
Ordering Information
Device
TJ (°C)
-55 to 150 13-inch Reel
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSH1001AE7-13
TO-263-7L
7
SH1001A
1
800
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
100
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
VGS
±20
V
TC = 25°C
290
Continuous Drain
Current (1)
ID
A
TC = 100°C
184
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
1160
81
A
A
EAS
984
mJ
TC = 25°C
313
Power Dissipation (4)
PD
W
TC = 100°C
125
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
10
10
8
ID = 20A
VDS = 50V
D = 20A
8
6
4
2
0
I
6
4
2
0
0
40
80
120
160
0
5
10
15
20
VGS (V)
Qg (nC)
Jiangsu JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.2
Page 1 of 5